Datasheet IRG4PH40UDPbF (International Rectifier) - 7
| Fabricante | International Rectifier |
| Descripción | Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode. UltraFast CoPack IGBT |
| Páginas / Página | 11 / 7 — Fig. 14. Fig. 15. Fig. 16. Fig. 17 |
| Formato / tamaño de archivo | PDF / 689 Kb |
| Idioma del documento | Inglés |
Fig. 14. Fig. 15. Fig. 16. Fig. 17
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IRG4PH40UDPbF 200 100 V = 2 00V R V = 2 00V R T J = 12 5°C T = 12 5°C J T J = 25 °C T = 25 °C J 160 I = F 1 6 A ) I = 16A 120 F s) I F = 8.0A (n - (A I = 8.0A F - M 10 I = R F 4 .0A t rr I IR I F = 4.0A 80 40 0 1 100 1000 100 1000 d if /dt - (A/µs) di f /dt - (A/µs)
Fig. 14
- Typical Reverse Recovery vs. dif/dt
Fig. 15
- Typical Recovery Current vs. dif/dt 600 1000 V = 2 00V R T = 12 5°C J T J = 25 °C 500 I = 4.0A F 400 s) /µ C I F = 16 A I = 8.0A F n (A ( I = 16A - t - F 300 100 I = /d F 8 .0A RR Q c)M e i(r 200 I = d F 4 .0A 100 V = 2 00V R T = 12 5°C J T = 25 °C J 0 10 100 1000 100 1000 d if /dt - (A/µs) di f /dt - (A/µs)
Fig. 16
- Typical Stored Charge vs. dif/dt
Fig. 17
- Typical di(rec)M/dt vs. dif/dt www.irf.com 7
Fig. 14
- Typical Reverse Recovery vs. dif/dt
Fig. 15
- Typical Recovery Current vs. dif/dt 600 1000 V = 2 00V R T = 12 5°C J T J = 25 °C 500 I = 4.0A F 400 s) /µ C I F = 16 A I = 8.0A F n (A ( I = 16A - t - F 300 100 I = /d F 8 .0A RR Q c)M e i(r 200 I = d F 4 .0A 100 V = 2 00V R T = 12 5°C J T = 25 °C J 0 10 100 1000 100 1000 d if /dt - (A/µs) di f /dt - (A/µs)
Fig. 16
- Typical Stored Charge vs. dif/dt
Fig. 17
- Typical di(rec)M/dt vs. dif/dt www.irf.com 7