Datasheet IRG4PH40UDPbF (International Rectifier) - 5
| Fabricante | International Rectifier |
| Descripción | Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode. UltraFast CoPack IGBT |
| Páginas / Página | 11 / 5 — Fig. 7 -. Fig. 8. Fig. 9. Fig. 10 |
| Formato / tamaño de archivo | PDF / 689 Kb |
| Idioma del documento | Inglés |
Fig. 7 -. Fig. 8. Fig. 9. Fig. 10
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IRG4PH40UDPbF 4000 20 GE = 0V, f = 1MHz = C + C C SHORTED ies ge gc , ce = C VCC = 400V I C = 21A V C Cres gc C = C + C oes ce gc 16 3000 12 Cies 2000 8 C, Capacitance (pF) C 1000 oes 4 GE C res V , Gate-to-Emitter Voltage (V) 0 0 1 10 100 0 20 40 60 80 100 V , Collector-to-Emitter Voltage (V) CE Q , Total Gate Charge (nC) G
Fig. 7 -
Typical Capacitance vs.
Fig. 8
- Typical Gate Charge vs. Collector-to-Emitter Voltage Gate-to-Emitter Voltage 5.0 100 V = 800V CC G 10Ω V = 15V GE R = Ohm V = 15V GE T = 25 C ° J V = 800V CC I = 21A C 4.5 I = A C 42 4.0 10 I = A C 21 I = A C 10.5 3.5 Total Switching Losses (mJ) Total Switching Losses (mJ) 3.0 1 0 10 20 30 40 50 -60 -40 -20 0 20 40 60 80 100 120 140 160 R , Gate Resistance (Ohm) G R T , Junction Temperature ( C ) G , Gate Resistance ( Ω ) J °
Fig. 9
- Typical Switching Losses vs. Gate
Fig. 10
- Typical Switching Losses vs. Resistance Junction Temperature www.irf.com 5
Fig. 7 -
Typical Capacitance vs.
Fig. 8
- Typical Gate Charge vs. Collector-to-Emitter Voltage Gate-to-Emitter Voltage 5.0 100 V = 800V CC G 10Ω V = 15V GE R = Ohm V = 15V GE T = 25 C ° J V = 800V CC I = 21A C 4.5 I = A C 42 4.0 10 I = A C 21 I = A C 10.5 3.5 Total Switching Losses (mJ) Total Switching Losses (mJ) 3.0 1 0 10 20 30 40 50 -60 -40 -20 0 20 40 60 80 100 120 140 160 R , Gate Resistance (Ohm) G R T , Junction Temperature ( C ) G , Gate Resistance ( Ω ) J °
Fig. 9
- Typical Switching Losses vs. Gate
Fig. 10
- Typical Switching Losses vs. Resistance Junction Temperature www.irf.com 5