Datasheet IRG4PH40UD (International Rectifier) - 3
| Fabricante | International Rectifier |
| Descripción | Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode. UltraFast CoPack IGBT |
| Páginas / Página | 11 / 3 — Fig. 1. Fig. 2. Fig. 3 |
| Formato / tamaño de archivo | PDF / 347 Kb |
| Idioma del documento | Inglés |
Fig. 1. Fig. 2. Fig. 3
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IRG4PH40UD 25 For both: Duty cycle: 50% 20 T J = 125°C ) T = 90°C sink (A Gate drive as specified Power Dissipation = W 35 NT 15 Square wave: 60% of rated voltage CURRE 10 D A I LO 5 Ideal diodes 00.1 1 10 100 f, Frequency (KHz)
Fig. 1
- Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 100 100 ) urrent (A T = 150 C o J T = 150 C o J itter C 10 m 10 T = 25 C o J T = 25 C o J ollector-to-E I , Collector-to-Emitter Current (A) C V = 15V GE I , C C V = 5 20µs PULSE WIDTH CC 0V 1 5µs PULSE WIDTH 1 10 1 5 6 7 8 9 10 V , Col ector-to-Emitter Voltage (V) CE V , Gate-to-Emitter Voltage (V) GE
Fig. 2
- Typical Output Characteristics
Fig. 3
- Typical Transfer Characteristics www.irf.com 3
Fig. 1
- Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 100 100 ) urrent (A T = 150 C o J T = 150 C o J itter C 10 m 10 T = 25 C o J T = 25 C o J ollector-to-E I , Collector-to-Emitter Current (A) C V = 15V GE I , C C V = 5 20µs PULSE WIDTH CC 0V 1 5µs PULSE WIDTH 1 10 1 5 6 7 8 9 10 V , Col ector-to-Emitter Voltage (V) CE V , Gate-to-Emitter Voltage (V) GE
Fig. 2
- Typical Output Characteristics
Fig. 3
- Typical Transfer Characteristics www.irf.com 3