Datasheet IM828-XCC (Infineon) - 7
| Fabricante | Infineon |
| Descripción | CIPOS Maxi IM828. The CIPOS Maxi IM828 product group offers the chance for integrating various power and control components to increase reliability, optimize PCB size and system costs. |
| Páginas / Página | 23 / 7 — CIPOS™ Maxi IM828. IM828-XCC. Absolute maximum ratings. 3.1. Module … |
| Revisión | 02_00 |
| Formato / tamaño de archivo | PDF / 1.3 Mb |
| Idioma del documento | Inglés |
CIPOS™ Maxi IM828. IM828-XCC. Absolute maximum ratings. 3.1. Module section. Description. Symbol. Condition. Value. Unit. 3.2
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CIPOS™ Maxi IM828 IM828-XCC Absolute maximum ratings 3 Absolute maximum ratings
(VDD = 15 V and TJ = 25°C, if not stated otherwise)
3.1 Module section Description Symbol Condition Value Unit
Storage temperature range TSTG -40 ~ 125 °C Operating case temperature TC Refer to Figure 7 -40 ~ 125 °C Operating junction temperature TJ -40 ~150 °C Isolation test voltage VISO 1min, RMS, f = 60Hz 2500 V
3.2 Inverter section Description Symbol Condition Value Unit
Max. blocking voltage VDSS 1200 V DC link supply voltage of P-N VPN Applied between P-N 900 V DC link supply voltage (surge) of P-N VPN(surge) Applied between P-N 1000 V T DC drain current1 I C = 25°C, TJ < 150°C ±35 D A TC = 80°C, TJ < 150°C ±20 Pulse drain current2 IDP ±60 A Power dissipation per MOSFET Ptot 86 W Short circuit withstand time3 tSC VDC ≤ 800 V, TJ ≤ 150°C 3 µs
3.3 Control section Description Symbol Condition Value Unit
High Side offset voltage VS 1200 V Repetitive peak reverse voltage of V bootstrap diode RRM 1200 V Module control supply voltage VDD -1 ~ 20 V High side floating supply voltage V (V BS -1 ~ 20 V B reference to VS) Input voltage(LIN, HIN, ITRIP, RFE) VIN -1 ~ VDD + 0.3 V 1 Pulse width and period are limited by junction temperature. 2 Verified by design, tp limited by Tjmax 3 Verified by design for single short circuit event. Datasheet 7 of 23 V 2.0 2020-09-03
CIPOS™ Maxi IM828 IM828-XCC Absolute maximum ratings 3 Absolute maximum ratings
(VDD = 15 V and TJ = 25°C, if not stated otherwise)
3.1 Module section Description Symbol Condition Value Unit
Storage temperature range TSTG -40 ~ 125 °C Operating case temperature TC Refer to Figure 7 -40 ~ 125 °C Operating junction temperature TJ -40 ~150 °C Isolation test voltage VISO 1min, RMS, f = 60Hz 2500 V
3.2 Inverter section Description Symbol Condition Value Unit
Max. blocking voltage VDSS 1200 V DC link supply voltage of P-N VPN Applied between P-N 900 V DC link supply voltage (surge) of P-N VPN(surge) Applied between P-N 1000 V T DC drain current1 I C = 25°C, TJ < 150°C ±35 D A TC = 80°C, TJ < 150°C ±20 Pulse drain current2 IDP ±60 A Power dissipation per MOSFET Ptot 86 W Short circuit withstand time3 tSC VDC ≤ 800 V, TJ ≤ 150°C 3 µs
3.3 Control section Description Symbol Condition Value Unit
High Side offset voltage VS 1200 V Repetitive peak reverse voltage of V bootstrap diode RRM 1200 V Module control supply voltage VDD -1 ~ 20 V High side floating supply voltage V (V BS -1 ~ 20 V B reference to VS) Input voltage(LIN, HIN, ITRIP, RFE) VIN -1 ~ VDD + 0.3 V 1 Pulse width and period are limited by junction temperature. 2 Verified by design, tp limited by Tjmax 3 Verified by design for single short circuit event. Datasheet 7 of 23 V 2.0 2020-09-03