Datasheet SiHH070N60EF (Vishay) - 2
| Fabricante | Vishay |
| Descripción | EF Series Power MOSFET With Fast Body Diode |
| Páginas / Página | 9 / 2 — SiHH070N60EF. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL. TYP. MAX. … |
| Formato / tamaño de archivo | PDF / 184 Kb |
| Idioma del documento | Inglés |
SiHH070N60EF. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL. TYP. MAX. UNIT. SPECIFICATIONS. PARAMETER SYMBOL. TEST. CONDITIONS MIN. Static
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SiHH070N60EF
www.vishay.com Vishay Siliconix
THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT
Maximum junction-to-ambient RthJA 38 50 °C/W Maximum junction-to-case (drain) RthJC 0.48 0.62
SPECIFICATIONS
(TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static
Drain-source breakdown voltage VDS VGS = 0 V, ID = 250 μA 600 - - V VDS temperature coefficient ΔVDS/TJ Reference to 25 °C, ID = 20 mA - 0.51 - V/°C Gate-source threshold voltage (N) VGS(th) VDS = VGS, ID = 250 μA 3 - 5 V VGS = ± 20 V - - ± 100 nA Gate-source leakage IGSS VGS = ± 30 V - - ± 1 μA VDS = 480 V, VGS = 0 V - - 1 μA Zero gate voltage drain current IDSS VDS = 480 V, VGS = 0 V, TJ = 125 °C - - 2 mA Drain-source on-state resistance RDS(on) VGS = 10 V ID = 15 A - 0.061 0.071 Ω Forward transconductance a gfs VDS = 20 V, ID = 15 A - 10.5 - S
Dynamic
Input capacitance Ciss V - 2647 - GS = 0 V, Output capacitance Coss VDS = 100 V, - 122 - f = 1 MHz Reverse transfer capacitance Crss - 6 - pF Effective output capacitance, energy - 90 - related a Co(er) VDS = 0 V to 480 V, VGS = 0 V Effective output capacitance, time related b Co(tr) - 560 - Total gate charge Qg - 50 75 Gate-source charge Qgs VGS = 10 V ID = 15 A, VDS = 480 V - 20 - nC Gate-drain charge Qgd - 17 - Turn-on delay time td(on) - 36 72 Rise time tr V - 79 119 DD = 480 V, ID = 15 A, ns V Turn-off delay time t GS = 10 V, Rg = 9.1 Ω d(off) - 55 83 Fall time tf - 38 76 Gate input resistance Rg f = 1 MHz 0.3 0.7 1.4 Ω
Drain-Source Body Diode Characteristics
MOSFET symbol Continuous source-drain diode current IS D - - 36 showing the integral reverse A G p - n junction diode Pulsed diode forward current ISM S - - 93 Diode forward voltage VSD TJ = 25 °C, IS = 15 A, VGS = 0 V - - 1.2 V Reverse recovery time trr - 136 272 ns TJ = 25 °C, IF = IS = 15 A, Reverse recovery charge Qrr - 0.9 1.8 μC di/dt = 100 A/μs, VR = 400 V Reverse recovery current IRRM - 12 - A
Notes
a. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDSS b. Coss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDSS S20-0109-Rev. B, 02-Mar-2020
2
Document Number: 92290 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Siliconix
THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT
Maximum junction-to-ambient RthJA 38 50 °C/W Maximum junction-to-case (drain) RthJC 0.48 0.62
SPECIFICATIONS
(TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static
Drain-source breakdown voltage VDS VGS = 0 V, ID = 250 μA 600 - - V VDS temperature coefficient ΔVDS/TJ Reference to 25 °C, ID = 20 mA - 0.51 - V/°C Gate-source threshold voltage (N) VGS(th) VDS = VGS, ID = 250 μA 3 - 5 V VGS = ± 20 V - - ± 100 nA Gate-source leakage IGSS VGS = ± 30 V - - ± 1 μA VDS = 480 V, VGS = 0 V - - 1 μA Zero gate voltage drain current IDSS VDS = 480 V, VGS = 0 V, TJ = 125 °C - - 2 mA Drain-source on-state resistance RDS(on) VGS = 10 V ID = 15 A - 0.061 0.071 Ω Forward transconductance a gfs VDS = 20 V, ID = 15 A - 10.5 - S
Dynamic
Input capacitance Ciss V - 2647 - GS = 0 V, Output capacitance Coss VDS = 100 V, - 122 - f = 1 MHz Reverse transfer capacitance Crss - 6 - pF Effective output capacitance, energy - 90 - related a Co(er) VDS = 0 V to 480 V, VGS = 0 V Effective output capacitance, time related b Co(tr) - 560 - Total gate charge Qg - 50 75 Gate-source charge Qgs VGS = 10 V ID = 15 A, VDS = 480 V - 20 - nC Gate-drain charge Qgd - 17 - Turn-on delay time td(on) - 36 72 Rise time tr V - 79 119 DD = 480 V, ID = 15 A, ns V Turn-off delay time t GS = 10 V, Rg = 9.1 Ω d(off) - 55 83 Fall time tf - 38 76 Gate input resistance Rg f = 1 MHz 0.3 0.7 1.4 Ω
Drain-Source Body Diode Characteristics
MOSFET symbol Continuous source-drain diode current IS D - - 36 showing the integral reverse A G p - n junction diode Pulsed diode forward current ISM S - - 93 Diode forward voltage VSD TJ = 25 °C, IS = 15 A, VGS = 0 V - - 1.2 V Reverse recovery time trr - 136 272 ns TJ = 25 °C, IF = IS = 15 A, Reverse recovery charge Qrr - 0.9 1.8 μC di/dt = 100 A/μs, VR = 400 V Reverse recovery current IRRM - 12 - A
Notes
a. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDSS b. Coss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDSS S20-0109-Rev. B, 02-Mar-2020
2
Document Number: 92290 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000