Datasheet 2SD601A (Secos)
| Fabricante | Secos |
| Descripción | 0.1A, 60V NPN Plastic-Encapsulate Transistor |
| Páginas / Página | 1 / 1 — 2SD601A. 0.1A , 60V. Elektronische Bauelemente. NPN Plastic-Encapsulate … |
| Formato / tamaño de archivo | PDF / 54 Kb |
| Idioma del documento | Inglés |
2SD601A. 0.1A , 60V. Elektronische Bauelemente. NPN Plastic-Encapsulate Transistor. SOT-23. FEATURE. CLASSIFICATION OF hFE
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2SD601A 0.1A , 60V Elektronische Bauelemente NPN Plastic-Encapsulate Transistor
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
SOT-23 FEATURE
High forward current transfer ratio hFE A L Low collector to emitter saturation voltage VCE(sat) 3 3 Top View C B
CLASSIFICATION OF hFE
1 1 2
Product-Rank
2SD601A-Q 2SD601A-R 2SD601A-S K E 2
Range
160~260 210~340 290~460 D
Marking Code
ZQ ZR ZS F G H J
PACKAGE INFORMATION Millimeter Millimeter REF. REF. Min. Max. Min. Max. Package MPQ LeaderSize
A 2.80 3.04 G 0.09 0.18 B 2.10 2.55 H 0.45 0.60 C 1.20 1.40 J 0.08 0.177 SOT-23 3K 7’ inch D 0.89 1.15 K 0.6 REF. E 1.78 2.04 L 0.89 1.02 F 0.30 0.50 Collector 3 1 Base 2 Emitter
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise specified)
Parameter Symbol Ratings Unit
Collector to Base Voltage VCBO 60 V Collector to Emitter Voltage VCEO 50 V Emitter to Base Voltage VEBO 7 V Collector Current - Continuous IC 100 mA Collector Power Dissipation PC 200 mW Junction, Storage Temperature TJ, TSTG 150, -55~150 °C
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise specified)
Parameter Symbol Min. Typ. Max. Unit Test Conditions
Collector to Base Breakdown Voltage V(BR)CBO 60 - - V IC=10µA, IE=0 Collector to Emitter Breakdown Voltage V(BR)CEO 50 - - V IC=2mA, IB=0 Emitter to Base Breakdown Voltage V(BR)EBO 7 - - V IE=10µA, IC=0 Collector Cut-Off Current ICBO - - 0.1 µA VCB=20V, IE=0 Emitter Cut-Off Current IEBO - - 100 µA VEB=10V, IC=0 Collector to Emitter Saturation Voltage VCE(sat) - - 0.3 V IC=100mA, IB=10mA hFE (1) 160 - 460 VCE=10V, IC=2mA DC Current Gain hFE (2) 90 - - VCE=2V, IC=100mA Transition Frequency fT - 150 - MHz VCE=10V, IC=2mA, f=200MHz Collector Output Capacitance Cob - 3.5 - pF VCB=10V, IE=0, f=1MHz http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 04-Mar-2011 Rev. B Page 1 of 1
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
SOT-23 FEATURE
High forward current transfer ratio hFE A L Low collector to emitter saturation voltage VCE(sat) 3 3 Top View C B
CLASSIFICATION OF hFE
1 1 2
Product-Rank
2SD601A-Q 2SD601A-R 2SD601A-S K E 2
Range
160~260 210~340 290~460 D
Marking Code
ZQ ZR ZS F G H J
PACKAGE INFORMATION Millimeter Millimeter REF. REF. Min. Max. Min. Max. Package MPQ LeaderSize
A 2.80 3.04 G 0.09 0.18 B 2.10 2.55 H 0.45 0.60 C 1.20 1.40 J 0.08 0.177 SOT-23 3K 7’ inch D 0.89 1.15 K 0.6 REF. E 1.78 2.04 L 0.89 1.02 F 0.30 0.50 Collector 3 1 Base 2 Emitter
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise specified)
Parameter Symbol Ratings Unit
Collector to Base Voltage VCBO 60 V Collector to Emitter Voltage VCEO 50 V Emitter to Base Voltage VEBO 7 V Collector Current - Continuous IC 100 mA Collector Power Dissipation PC 200 mW Junction, Storage Temperature TJ, TSTG 150, -55~150 °C
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise specified)
Parameter Symbol Min. Typ. Max. Unit Test Conditions
Collector to Base Breakdown Voltage V(BR)CBO 60 - - V IC=10µA, IE=0 Collector to Emitter Breakdown Voltage V(BR)CEO 50 - - V IC=2mA, IB=0 Emitter to Base Breakdown Voltage V(BR)EBO 7 - - V IE=10µA, IC=0 Collector Cut-Off Current ICBO - - 0.1 µA VCB=20V, IE=0 Emitter Cut-Off Current IEBO - - 100 µA VEB=10V, IC=0 Collector to Emitter Saturation Voltage VCE(sat) - - 0.3 V IC=100mA, IB=10mA hFE (1) 160 - 460 VCE=10V, IC=2mA DC Current Gain hFE (2) 90 - - VCE=2V, IC=100mA Transition Frequency fT - 150 - MHz VCE=10V, IC=2mA, f=200MHz Collector Output Capacitance Cob - 3.5 - pF VCB=10V, IE=0, f=1MHz http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 04-Mar-2011 Rev. B Page 1 of 1