Datasheet ZXM61N02F (Diodes) - 4
| Fabricante | Diodes |
| Descripción | N-Channel Enhancement Mode MOSFET |
| Páginas / Página | 7 / 4 — ZXM61N02F. ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise … |
| Formato / tamaño de archivo | PDF / 217 Kb |
| Idioma del documento | Inglés |
ZXM61N02F. ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated). STATIC. DYNAMIC. SWITCHING. SOURCE-DRAIN DIODE
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ZXM61N02F ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP.(3) MAX. UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage V(BR)DSS 20 V ID=250µA, VGS=0V Zero Gate Voltage Drain Current IDSS 1 µA VDS=20V, VGS=0V Gate-Body Leakage IGSS 100 nA VGS=± 12V, VDS=0V Gate-Source Threshold Voltage VGS(th) 0.7 V ID=250µA, VDS= VGS Static Drain-Source On-State Resistance R Ω DS(on) 0.18 VGS=4.5V, ID=0.93A (1) 0.24 Ω VGS=2.7V, ID=0.47A Forward Transconductance (3) gfs 1.3 S VDS=10V,ID=0.47A
DYNAMIC
(3) Input Capacitance Ciss 160 pF VDS=15 V, VGS=0V, Output Capacitance Coss 50 pF f=1MHz Reverse Transfer Capacitance Crss 30 pF
SWITCHING
(2) (3) Turn-On Delay Time td(on) 2.4 ns Rise Time tr 4.2 ns VDD =10V, ID=0.93A RG=6.2Ω, RD=11Ω Turn-Off Delay Time td(off) 7.8 ns (refer to test circuit) Fall Time tf 4.2 ns Total Gate Charge Qg 3.4 nC VDS=16V,VGS=4.5V, Gate-Source Charge Qgs 0.41 nC ID=0.93A (refer to test Gate-Drain Charge Qgd 0.8 nC circuit)
SOURCE-DRAIN DIODE
Diode Forward Voltage (1) VSD 0.95 V TJ=25°C, IS=0.93A, VGS=0V Reverse Recovery Time (3) trr 12.9 ns TJ=25°C, IF=0.93A, di/dt= 100A/µs Reverse Recovery Charge (3) Qrr 5.2 nC NOTES (1) Measured under pulsed conditions. Width≤300µs. Duty cycle ≤2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. ISSUE 1 - JUNE 2004
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PARAMETER SYMBOL MIN. TYP.(3) MAX. UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage V(BR)DSS 20 V ID=250µA, VGS=0V Zero Gate Voltage Drain Current IDSS 1 µA VDS=20V, VGS=0V Gate-Body Leakage IGSS 100 nA VGS=± 12V, VDS=0V Gate-Source Threshold Voltage VGS(th) 0.7 V ID=250µA, VDS= VGS Static Drain-Source On-State Resistance R Ω DS(on) 0.18 VGS=4.5V, ID=0.93A (1) 0.24 Ω VGS=2.7V, ID=0.47A Forward Transconductance (3) gfs 1.3 S VDS=10V,ID=0.47A
DYNAMIC
(3) Input Capacitance Ciss 160 pF VDS=15 V, VGS=0V, Output Capacitance Coss 50 pF f=1MHz Reverse Transfer Capacitance Crss 30 pF
SWITCHING
(2) (3) Turn-On Delay Time td(on) 2.4 ns Rise Time tr 4.2 ns VDD =10V, ID=0.93A RG=6.2Ω, RD=11Ω Turn-Off Delay Time td(off) 7.8 ns (refer to test circuit) Fall Time tf 4.2 ns Total Gate Charge Qg 3.4 nC VDS=16V,VGS=4.5V, Gate-Source Charge Qgs 0.41 nC ID=0.93A (refer to test Gate-Drain Charge Qgd 0.8 nC circuit)
SOURCE-DRAIN DIODE
Diode Forward Voltage (1) VSD 0.95 V TJ=25°C, IS=0.93A, VGS=0V Reverse Recovery Time (3) trr 12.9 ns TJ=25°C, IF=0.93A, di/dt= 100A/µs Reverse Recovery Charge (3) Qrr 5.2 nC NOTES (1) Measured under pulsed conditions. Width≤300µs. Duty cycle ≤2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. ISSUE 1 - JUNE 2004
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