Datasheet ZXM61N02F (Diodes) - 2

ZXM61N02F ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDSS 20 V Gate Source Voltage V ± GS 12 V Continuous Drain Current (VGS=4.5V; TA=25°C)(b) ID 1.7 A (VGS=4.5V; TA=70°C)(b) 1.3 Pulsed Drain Current (c) IDM 7.4 A Continuous Source Current (Body Diode) (b) IS 0.8 A Pulsed Source Current (Body Diode) ISM 7.4 A Power Dissipation at TA=25°C (a) PD 625 mW Linear Derating Factor 5 mW/°C Power Dissipation at TA=25°C (b) PD 806 mW Linear Derating Factor 6.4 mW/°C Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
THERMAL RESISTANCE
PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a) RθJA 200 °C/W Junction to Ambient (b) RθJA 155 °C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t<5 secs. (c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. ISSUE 1 - JUNE 2004
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