Datasheet TW070J120B (Toshiba)

TW070J120B MOSFETs Silicon Carbide N-Channel MOS TW070J120B 1. Applications • Switching Voltage Regulators 2. Features (1) Chip design of 2nd generation (Built-in SiC schottky barrier diode) (2) Low diode forward voltage: VDSF = -1.35 V (typ.) (3) High voltage: VDSS = 1200 V (4) Low drain-source on-resistance: RDS(ON) = 70 mΩ (typ.) (5) Less susceptible to malfunction due to high threshold voltage: Vth = 4.2 to 5.8 V (VDS = 10 V, ID = 20 mA) (6) Enhancement mode. 3. Packaging and Internal Circuit 1: Gate 2: Drain (heatsink) 3: Source TO-3P(N) Start of commercial production 2020-08 ©2020 1 2020-08-05 Toshiba Electronic Devices & Storage Corporation Rev.2.0