Datasheet DMT47M2LDVQ (Diodes) - 5
| Fabricante | Diodes |
| Descripción | Dual 40V N-Channel Enhancement Mode MOSFET PowerDI3333-8 |
| Páginas / Página | 7 / 5 — DMT47M2LDVQ. www.diodes.com |
| Formato / tamaño de archivo | PDF / 498 Kb |
| Idioma del documento | Inglés |
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DMT47M2LDVQ
1 D=0.7 D=0.5 D=0.9 E C D=0.3 N TA SI S 0.1 E D=0.1 R LA D=0.05 M R E D=0.02 TH T N D=0.01 EI S 0.01 D=0.005 N A D=Single Pulse TR,)t(r Rθ (t) = r(t) * R JC θJC Rθ = 4.79℃/W JC Duty Cycle, D = t1/t2 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000 10000 100000 1000000 t1, PULSE DURATION TIME (sec) Figure 13. Transient Thermal Resistance DMT47M2LDVQ 5 of 7 May 2019 Document number: DS41516 Rev. 2 - 2
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1 D=0.7 D=0.5 D=0.9 E C D=0.3 N TA SI S 0.1 E D=0.1 R LA D=0.05 M R E D=0.02 TH T N D=0.01 EI S 0.01 D=0.005 N A D=Single Pulse TR,)t(r Rθ (t) = r(t) * R JC θJC Rθ = 4.79℃/W JC Duty Cycle, D = t1/t2 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000 10000 100000 1000000 t1, PULSE DURATION TIME (sec) Figure 13. Transient Thermal Resistance DMT47M2LDVQ 5 of 7 May 2019 Document number: DS41516 Rev. 2 - 2
www.diodes.com
© Diodes Incorporated