Datasheet SiZ240DT (Vishay) - 5
| Fabricante | Vishay |
| Descripción | Dual N-Channel 40 V (D-S) MOSFETs |
| Páginas / Página | 14 / 5 — SiZ240DT. CHANNEL-1 TYPICAL CHARACTERISTICS. Source-Drain Diode Forward … |
| Formato / tamaño de archivo | PDF / 339 Kb |
| Idioma del documento | Inglés |
SiZ240DT. CHANNEL-1 TYPICAL CHARACTERISTICS. Source-Drain Diode Forward Voltage. On-Resistance vs. Gate-to-Source Voltage
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SiZ240DT
www.vishay.com Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted) Axis Title Axis Title 100 10000 0.030 10000 I = 10 A D ) 0.024 ) 10 Ω (A 1000 1000 0.018 rrent u T = 150 °C J T = 25 °C ne J ne ne ine ne ine 1 T = 125 °C 1st li 2nd li J 1st li 2nd l n-Resistance ( 2nd li 2nd l 0.012 O ource C 100 - S ) 100 - n 0.1 I S DS(o 0.006 R T = 25 °C J 0.01 10 0 10 0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 V - Source-to-Drain Voltage (V) SD V - Gate-to-Source Voltage (V) GS
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
Axis Title Axis Title 2.0 10000 50 10000 I = 250 μA D 40 1.7 ) (V 1000 1000 ine ) 30 (th ine ne ne 2nd l GS ne ne V r (W 1.4 e w 1st li 1st li 2nd l o 2nd li 2nd li 20 P 100 100 1.1 10 0 10 0.8 10 0.001 0.01 0.1 1 10 100 1000 -50 -25 0 25 50 75 100 125 150 Time (s) T - Junction Temperature (°C) J 2nd line
Threshold Voltage Single Pulse Power, Junction-to-Ambient
Axis Title 1000 10000 I limited DM 100 ) Limited by R a DS(on) 1000 10 100 μs rrent (A ne ne ine u C n 1 ms 1st li 2nd li 2nd l 1 rai 10 ms D 100 - 100 ms I D 0.1 10 s, 1 s T = 25 °C, A DC single pulse BVDSS limited 0.01 10 0.01 0.1 1 10 100 V - Drain-to-Source Voltage (V) DS
Safe Operating Area, Junction-to-Ambient Note
a. VGS > minimum VGS at which RDS(on) is specified S19-1100-Rev. B, 30-Dec-2019
5
Document Number: 77182 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted) Axis Title Axis Title 100 10000 0.030 10000 I = 10 A D ) 0.024 ) 10 Ω (A 1000 1000 0.018 rrent u T = 150 °C J T = 25 °C ne J ne ne ine ne ine 1 T = 125 °C 1st li 2nd li J 1st li 2nd l n-Resistance ( 2nd li 2nd l 0.012 O ource C 100 - S ) 100 - n 0.1 I S DS(o 0.006 R T = 25 °C J 0.01 10 0 10 0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 V - Source-to-Drain Voltage (V) SD V - Gate-to-Source Voltage (V) GS
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
Axis Title Axis Title 2.0 10000 50 10000 I = 250 μA D 40 1.7 ) (V 1000 1000 ine ) 30 (th ine ne ne 2nd l GS ne ne V r (W 1.4 e w 1st li 1st li 2nd l o 2nd li 2nd li 20 P 100 100 1.1 10 0 10 0.8 10 0.001 0.01 0.1 1 10 100 1000 -50 -25 0 25 50 75 100 125 150 Time (s) T - Junction Temperature (°C) J 2nd line
Threshold Voltage Single Pulse Power, Junction-to-Ambient
Axis Title 1000 10000 I limited DM 100 ) Limited by R a DS(on) 1000 10 100 μs rrent (A ne ne ine u C n 1 ms 1st li 2nd li 2nd l 1 rai 10 ms D 100 - 100 ms I D 0.1 10 s, 1 s T = 25 °C, A DC single pulse BVDSS limited 0.01 10 0.01 0.1 1 10 100 V - Drain-to-Source Voltage (V) DS
Safe Operating Area, Junction-to-Ambient Note
a. VGS > minimum VGS at which RDS(on) is specified S19-1100-Rev. B, 30-Dec-2019
5
Document Number: 77182 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000