Datasheet AD8510, AD8512, AD8513 (Analog Devices) - 4
| Fabricante | Analog Devices |
| Descripción | Precision, Very Low Noise, Low Input Bias Current, Wide Bandwidth JFET Quad Operational Amplifier |
| Páginas / Página | 21 / 4 — AD8510/AD8512/AD8513. Date Sheet. SPECIFICATIONS. Table 1. Parameter. … |
| Revisión | K |
| Formato / tamaño de archivo | PDF / 383 Kb |
| Idioma del documento | Inglés |
AD8510/AD8512/AD8513. Date Sheet. SPECIFICATIONS. Table 1. Parameter. Symbol. Conditions. Min. Typ. Max. Unit
Línea de modelo para esta hoja de datos
- AD8510AR AD8510ARMZ AD8510ARMZ-REEL AD8510ARZ AD8510ARZ-REEL AD8510ARZ-REEL7 AD8510BRZ AD8510BRZ-REEL AD8510BRZ-REEL7
Versión de texto del documento
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AD8510/AD8512/AD8513 Date Sheet SPECIFICATIONS
At VS = ±5 V, VCM = 0 V, TA = 25°C, unless otherwise noted.
Table 1. Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS Offset Voltage (B Grade)1 VOS 0.08 0.4 mV −40°C < TA < +125°C 0.8 mV Offset Voltage (A Grade) VOS 0.1 0.9 mV −40°C < TA < +125°C 1.8 mV Input Bias Current IB 21 75 pA −40°C < TA < +85°C 0.7 nA −40°C < TA < +125°C 7.5 nA Input Offset Current IOS 5 50 pA −40°C < TA < +85°C 0.3 nA −40°C < TA < +125°C 0.5 nA Input Capacitance Differential 12.5 pF Common Mode 11.5 pF Input Voltage Range −2.0 +2.5 V Common-Mode Rejection Ratio CMRR VCM = −2.0 V to +2.5 V 86 100 dB Large-Signal Voltage Gain AVO RL = 2 kΩ, VO = −3 V to +3 V 65 107 V/mV Offset Voltage Drift (B Grade)1 ΔVOS/ΔT 0.9 5 μV/°C Offset Voltage Drift (A Grade) ΔVOS/ΔT 1.7 12 μV/°C OUTPUT CHARACTERISTICS Output Voltage High VOH RL = 10 kΩ 4.1 4.3 V Output Voltage Low VOL RL = 10 kΩ, −40°C < TA < +125°C −4.9 −4.7 V Output Voltage High VOH RL = 2 kΩ 3.9 4.2 V Output Voltage Low VOL RL = 2 kΩ, −40°C < TA < +125°C −4.9 −4.5 V Output Voltage High VOH RL = 600 Ω 3.7 4.1 V Output Voltage Low VOL RL = 600 Ω, −40°C < TA < +125°C −4.8 −4.2 V Output Current IOUT ±40 ±54 mA POWER SUPPLY Power Supply Rejection Ratio PSRR VS = ±4.5 V to ±18 V 86 130 dB Supply Current/Amplifier ISY AD8510/AD8512/AD8513 VO = 0 V 2.0 2.3 mA AD8510/AD8512 −40°C < TA < +125°C 2.5 mA AD8513 −40°C < TA < +125°C 2.75 mA DYNAMIC PERFORMANCE Slew Rate SR RL = 2 kΩ 20 V/μs Gain Bandwidth Product GBP 8 MHz Settling Time tS To 0.1%, 0 V to 4 V step, G = +1 0.4 μs Total Harmonic Distortion (THD) + Noise THD + N 1 kHz, G = +1, RL = 2 kΩ 0.0005 % Phase Margin φM 44.5 Degrees NOISE PERFORMANCE Voltage Noise Density en f = 10 Hz 34 nV/√Hz f = 100 Hz 12 nV/√Hz f = 1 kHz 8.0 10 nV/√Hz f = 10 kHz 7.6 nV/√Hz Peak-to-Peak Voltage Noise en p-p 0.1 Hz to 10 Hz bandwidth 2.4 5.2 μV p-p 1 AD8510/AD8512 only. Rev. K | Page 4 of 21 Document Outline FEATURES APPLICATIONS PIN CONFIGURATIONS GENERAL DESCRIPTION TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS ELECTRICAL CHARACTERISTICS ABSOLUTE MAXIMUM RATINGS ESD CAUTION TYPICAL PERFORMANCE CHARACTERISTICS GENERAL APPLICATION INFORMATION INPUT OVERVOLTAGE PROTECTION OUTPUT PHASE REVERSAL TOTAL HARMONIC DISTORTION (THD) + NOISE TOTAL NOISE INCLUDING SOURCE RESISTORS SETTLING TIME OVERLOAD RECOVERY TIME CAPACITIVE LOAD DRIVE OPEN-LOOP GAIN AND PHASE RESPONSE PRECISION RECTIFIERS I-V CONVERSION APPLICATIONS Photodiode Circuits Signal Transmission Applications Crosstalk OUTLINE DIMENSIONS ORDERING GUIDE
AD8510/AD8512/AD8513 Date Sheet SPECIFICATIONS
At VS = ±5 V, VCM = 0 V, TA = 25°C, unless otherwise noted.
Table 1. Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS Offset Voltage (B Grade)1 VOS 0.08 0.4 mV −40°C < TA < +125°C 0.8 mV Offset Voltage (A Grade) VOS 0.1 0.9 mV −40°C < TA < +125°C 1.8 mV Input Bias Current IB 21 75 pA −40°C < TA < +85°C 0.7 nA −40°C < TA < +125°C 7.5 nA Input Offset Current IOS 5 50 pA −40°C < TA < +85°C 0.3 nA −40°C < TA < +125°C 0.5 nA Input Capacitance Differential 12.5 pF Common Mode 11.5 pF Input Voltage Range −2.0 +2.5 V Common-Mode Rejection Ratio CMRR VCM = −2.0 V to +2.5 V 86 100 dB Large-Signal Voltage Gain AVO RL = 2 kΩ, VO = −3 V to +3 V 65 107 V/mV Offset Voltage Drift (B Grade)1 ΔVOS/ΔT 0.9 5 μV/°C Offset Voltage Drift (A Grade) ΔVOS/ΔT 1.7 12 μV/°C OUTPUT CHARACTERISTICS Output Voltage High VOH RL = 10 kΩ 4.1 4.3 V Output Voltage Low VOL RL = 10 kΩ, −40°C < TA < +125°C −4.9 −4.7 V Output Voltage High VOH RL = 2 kΩ 3.9 4.2 V Output Voltage Low VOL RL = 2 kΩ, −40°C < TA < +125°C −4.9 −4.5 V Output Voltage High VOH RL = 600 Ω 3.7 4.1 V Output Voltage Low VOL RL = 600 Ω, −40°C < TA < +125°C −4.8 −4.2 V Output Current IOUT ±40 ±54 mA POWER SUPPLY Power Supply Rejection Ratio PSRR VS = ±4.5 V to ±18 V 86 130 dB Supply Current/Amplifier ISY AD8510/AD8512/AD8513 VO = 0 V 2.0 2.3 mA AD8510/AD8512 −40°C < TA < +125°C 2.5 mA AD8513 −40°C < TA < +125°C 2.75 mA DYNAMIC PERFORMANCE Slew Rate SR RL = 2 kΩ 20 V/μs Gain Bandwidth Product GBP 8 MHz Settling Time tS To 0.1%, 0 V to 4 V step, G = +1 0.4 μs Total Harmonic Distortion (THD) + Noise THD + N 1 kHz, G = +1, RL = 2 kΩ 0.0005 % Phase Margin φM 44.5 Degrees NOISE PERFORMANCE Voltage Noise Density en f = 10 Hz 34 nV/√Hz f = 100 Hz 12 nV/√Hz f = 1 kHz 8.0 10 nV/√Hz f = 10 kHz 7.6 nV/√Hz Peak-to-Peak Voltage Noise en p-p 0.1 Hz to 10 Hz bandwidth 2.4 5.2 μV p-p 1 AD8510/AD8512 only. Rev. K | Page 4 of 21 Document Outline FEATURES APPLICATIONS PIN CONFIGURATIONS GENERAL DESCRIPTION TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS ELECTRICAL CHARACTERISTICS ABSOLUTE MAXIMUM RATINGS ESD CAUTION TYPICAL PERFORMANCE CHARACTERISTICS GENERAL APPLICATION INFORMATION INPUT OVERVOLTAGE PROTECTION OUTPUT PHASE REVERSAL TOTAL HARMONIC DISTORTION (THD) + NOISE TOTAL NOISE INCLUDING SOURCE RESISTORS SETTLING TIME OVERLOAD RECOVERY TIME CAPACITIVE LOAD DRIVE OPEN-LOOP GAIN AND PHASE RESPONSE PRECISION RECTIFIERS I-V CONVERSION APPLICATIONS Photodiode Circuits Signal Transmission Applications Crosstalk OUTLINE DIMENSIONS ORDERING GUIDE