Datasheet FDC6312P (ON Semiconductor) - 4

FDS6312P Typical Characteristics 2.5 -ID, DRAIN CURRENT (A) VGS = -4.5V
5 RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE 6
-3.0V -3.5V
-2.5V 4
-2.0V
3
-1.8V
2
1 -1.5V 2.25
VGS = -1.8V
2
1.75
-2.0V
1.5
-2.5V
1.25 -3.0V
-3.5V 0.75 0
0 0.5 1 1.5 2 0 2.5 1 2 Figure 1. On-Region Characteristics. 4 5 6 Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.35 1.6
ID = -2.3A
VGS =-4.5V RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE 3 -ID, DRAIN CURRENT (A) -VDS, DRAIN-SOURCE VOLTAGE (V) 1.4 1.2 1 0.8 0.6
-50 -25 0 25 50 75 100 125 ID = -0.8 A
0.3
0.25
0.2
TA = 125oC
0.15 0.1 TA = 25oC 0.05 150 1 2 TJ, JUNCTION TEMPERATURE (oC) 3 4 5 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with
Temperature. Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10 TA = -55oC VDS = 5V -IS, REVERSE DRAIN CURRENT (A) 6
25oC 5
-ID, DRAIN CURRENT (A) -4.5V 1 125oC
4
3
2
1 VGS = 0V
1 TA = 125oC
25oC 0.1 -55oC
0.01 0.001 0.0001 0
0.5 1 1.5 2 2.5 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 3 0 0.2 0.4 0.6 0.8 1 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature. FDC6312P Rev C (W)