Datasheet MCP47FXBX4/8 (Microchip) - 5
| Fabricante | Microchip |
| Descripción | 8/10/12-Bit Quad/Octal Voltage Output, 6 LSb INL Digital-to-Analog Converters with I²C Interface |
| Páginas / Página | 124 / 5 — MCP47FXBX4/8. 1.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings(†) |
| Formato / tamaño de archivo | PDF / 9.8 Mb |
| Idioma del documento | Inglés |
MCP47FXBX4/8. 1.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings(†)
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MCP47FXBX4/8
1.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings(†)
Voltage on VDD with Respect to VSS . -0.6V to +6.5V
Voltage on all Pins with Respect to VSS . -0.6V to VDD+0.3V
Input Clamp Current, IIK (VI < 0, VI > VDD, VI > VPP on HV Pins) . ±20 mA
Output Clamp Current, IOK (VO < 0 or VO > VDD) . ±20 mA
Maximum Current out of the VSS Pin (Quad) .150 mA
(Octal).150 mA
Maximum Current into the VDD Pin (Quad) .150 mA
(Octal).150 mA
Maximum Current Sourced by the VOUT Pin.20 mA
Maximum Current Sunk by the VOUT Pin.20 mA
Maximum Current Sunk by the VREF Pin .125 µA
Maximum Input Current Source/Sunk by the SDA, SCL Pins .2 mA
Maximum Output Current Sunk by the SDA Output Pin .25 mA
Total Power Dissipation(1) .400 mW
Package Power Dissipation (TA = +50°C, TJ = +150°C)
TSSOP-20.1300 mW
VQFN-20 (5 x 5, ML).2800 mW
ESD Protection on all Pins±6 kV (HBM)
±400V (MM)
±2 kV (CDM)
Latch-Up (per JEDEC® JESD78A) at +125°C . ±100 mA
Storage Temperature .-65°C to +150°C
Ambient Temperature with Power Applied .-55°C to +125°C
Soldering Temperature of Leads (10 seconds) . +300°C
Maximum Junction Temperature (TJ) . +150°C
† Notice: Stresses above those listed under “Maximum Ratings” may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at those or any other conditions above those indicated in the
operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods
may affect device reliability.
Note 1: Power dissipation is calculated as follows:
PDIS = VDD × {IDD - IOH} + {(VDD – VOH) × IOH} + (VOL × IOL) 2020 Microchip Technology Inc. DS20006368A-page 5
1.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings(†)
Voltage on VDD with Respect to VSS . -0.6V to +6.5V
Voltage on all Pins with Respect to VSS . -0.6V to VDD+0.3V
Input Clamp Current, IIK (VI < 0, VI > VDD, VI > VPP on HV Pins) . ±20 mA
Output Clamp Current, IOK (VO < 0 or VO > VDD) . ±20 mA
Maximum Current out of the VSS Pin (Quad) .150 mA
(Octal).150 mA
Maximum Current into the VDD Pin (Quad) .150 mA
(Octal).150 mA
Maximum Current Sourced by the VOUT Pin.20 mA
Maximum Current Sunk by the VOUT Pin.20 mA
Maximum Current Sunk by the VREF Pin .125 µA
Maximum Input Current Source/Sunk by the SDA, SCL Pins .2 mA
Maximum Output Current Sunk by the SDA Output Pin .25 mA
Total Power Dissipation(1) .400 mW
Package Power Dissipation (TA = +50°C, TJ = +150°C)
TSSOP-20.1300 mW
VQFN-20 (5 x 5, ML).2800 mW
ESD Protection on all Pins±6 kV (HBM)
±400V (MM)
±2 kV (CDM)
Latch-Up (per JEDEC® JESD78A) at +125°C . ±100 mA
Storage Temperature .-65°C to +150°C
Ambient Temperature with Power Applied .-55°C to +125°C
Soldering Temperature of Leads (10 seconds) . +300°C
Maximum Junction Temperature (TJ) . +150°C
† Notice: Stresses above those listed under “Maximum Ratings” may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at those or any other conditions above those indicated in the
operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods
may affect device reliability.
Note 1: Power dissipation is calculated as follows:
PDIS = VDD × {IDD - IOH} + {(VDD – VOH) × IOH} + (VOL × IOL) 2020 Microchip Technology Inc. DS20006368A-page 5