Datasheet AP4405AEN (Asahi Kasei Microdevices)
| Fabricante | Asahi Kasei Microdevices |
| Descripción | Ultra-Low Power Voltage Detector with P and N-Channel MOSFET Switch |
| Páginas / Página | 19 / 1 — AP4405AEN. Ultra-Low Power Voltage Detector with P and N-Channel MOSFET … |
| Formato / tamaño de archivo | PDF / 972 Kb |
| Idioma del documento | Inglés |
AP4405AEN. Ultra-Low Power Voltage Detector with P and N-Channel MOSFET Switch. General Description. 2. Features
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[AP4405AEN]
AP4405AEN Ultra-Low Power Voltage Detector with P and N-Channel MOSFET Switch 1. General Description
The AP4405AEN is an ultra-low power consumption, 0.010μA, voltage detector IC that integrates MOSFET switches and gate logic circuits. The AP4405AEN’s polarity of voltage detection result is selectable and the gate logic can be controlled separately from input detection voltage. On-chip P-ch MOSFET and N-ch MOSFET on & off controll action along with voltege detection result is utilzed as a load switch function. The AP4405AEN achieves best in class low power consumption and offers smaller PCB area than conventional voltage detector ICs with discrete logics and external MOSFETs. The IC is suitable for various applications, such as over charge/discharge protection of Lithium-ion batteries and Lithium-ion capacitors, power management function of energy harvesting devices and load switch of wearable devices.
2. Features
Power management function Voltage detection circuit Control logic with independent power supply On-chip P-channel and N-Channel MOSFETs Wide range for detection voltage Detection Voltage “High” (VDETH) 1.8 ~ 4.4V (Options) Detection Voltage “Low” (VDETL) 1.7 ~ 4.3V (Options) Voltage detection accuracy ±35mV (VDETH, VDETL >3.0V) ±20mV (VDETH, VDETL≦3.0V) Ultra-low power consumption 0.010μA typical Response Time 0.5msec typical On resistance On-chip P-ch MOSFET 1.3 Ω typical On-chip N-ch MOSFET 2.3 Ω typical Operation temperature -40 ~ +85 °C Package 16-pin HWQFN (3.0 x 3.0mm 0.5mm pitch) 019001973-E-00 2019/3 - 1 -
AP4405AEN Ultra-Low Power Voltage Detector with P and N-Channel MOSFET Switch 1. General Description
The AP4405AEN is an ultra-low power consumption, 0.010μA, voltage detector IC that integrates MOSFET switches and gate logic circuits. The AP4405AEN’s polarity of voltage detection result is selectable and the gate logic can be controlled separately from input detection voltage. On-chip P-ch MOSFET and N-ch MOSFET on & off controll action along with voltege detection result is utilzed as a load switch function. The AP4405AEN achieves best in class low power consumption and offers smaller PCB area than conventional voltage detector ICs with discrete logics and external MOSFETs. The IC is suitable for various applications, such as over charge/discharge protection of Lithium-ion batteries and Lithium-ion capacitors, power management function of energy harvesting devices and load switch of wearable devices.
2. Features
Power management function Voltage detection circuit Control logic with independent power supply On-chip P-channel and N-Channel MOSFETs Wide range for detection voltage Detection Voltage “High” (VDETH) 1.8 ~ 4.4V (Options) Detection Voltage “Low” (VDETL) 1.7 ~ 4.3V (Options) Voltage detection accuracy ±35mV (VDETH, VDETL >3.0V) ±20mV (VDETH, VDETL≦3.0V) Ultra-low power consumption 0.010μA typical Response Time 0.5msec typical On resistance On-chip P-ch MOSFET 1.3 Ω typical On-chip N-ch MOSFET 2.3 Ω typical Operation temperature -40 ~ +85 °C Package 16-pin HWQFN (3.0 x 3.0mm 0.5mm pitch) 019001973-E-00 2019/3 - 1 -