AOZ8S212UD4Electrical Characteristics TA = 25°C unless otherwise specified. Any I/O Pin-to-Ground. PositiveITLP2ITLP1IHoldITVF2 VF1 IRVHoldVBRVTLP1 VTLP2 VRWMIF1UnidirectionalTVSIF2SymbolParameterConditionsMin.Typ.MaxUnits AOZ8S212UD4-03 3.3 V VRWM Reverse Working Voltage AOZ8S212UD4-05 5 V VBR Reverse Breakdown Voltage IT = 100 µA 6 9 V IR Reverse Leakage Current Max. VRWM 1 50 nA I 1.5 2 V Clamping Voltage(3)(4) TLP = 1 A I -1.5 -2 V V TLP = -1 A CL (100 ns Transmission Line Pulse, I/O Pin to GND) ITLP = 15 A 8 10 V ITLP = -15 A -9 -11 V RDNY Dynamic Resistance(3) ITLP = 1A to 15 A 0.45 Ω VPIN 3,8 = 0 V, VI/O = 1.65 V, f = 1 MHz 0.20 0.25 pF CJ Junction Capacitance VPIN 3,8 = 0 V, VI/O = 1.65 V, f = 1 MHz, 0.10 pF I/O Pin-to-I/O Pin Notes: 3. These specifications are guaranteed by design and characterization. 4. Measurements performed using a 100ns Transmission Line Pulse (TLP) system. Rev. 1.0 July 2020 www.aosmd.com Page 3 of 6