Datasheet PS508, PS509 (Diodes) - 6
| Fabricante | Diodes |
| Descripción | Precision 8-Channels, Differential 4-Channels, 36V Analog Multiplexers |
| Páginas / Página | 15 / 6 — PS508/PS509. Electrical Characteristics: Dual Supply Cont. Symbol. … |
| Formato / tamaño de archivo | PDF / 2.4 Mb |
| Idioma del documento | Inglés |
PS508/PS509. Electrical Characteristics: Dual Supply Cont. Symbol. Parameters. Conditions. Min. Typ. Max. Units. Note:
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A product Line of Diodes Incorporated
PS508/PS509 Electrical Characteristics: Dual Supply Cont. Symbol Parameters Conditions Min. Typ. Max. Units
171 310 ns V = 10V, R = 300Ω, t Transition time S L T = –40°C to +85°C 310 ns t C = 35pF, A L T = –40°C to +125°C 310 ns A t Break-before-make V = 10V, R = 300Ω, C = 35pF, T = –40°C to S L L A BBM time delay +125°C 30 75 ns V = 0V 0.9 pC Q Charge injection C = 1nF, R = 0Ω S J L S V = –15V to +15V ±2 pC S Nonadjacent channel to D, DA, DB -96 dB Off-isolation R = 50Ω, V = 1V , L S RMS f = 1MHz Adjacent channel to D, DA, DB -85 dB Channel-to-channel R = 50Ω, V = 1V , Nonadjacent channels -96 dB L S RMS crosstalk f = 1MHz Adjacent channels -88 dB C Input off-capacitance f = 1MHz, V = 0V 5 7 pF S(OFF) S PS508 24 30 pF C Output off-capacitance f = 1MHz, V = 0V D(OFF) S PS509 15 20 pF PS508 30 36 pF C Input/Output on-ca- = 0V D(ON) pacitance f = 1MHz, VS PS509 20 25 pF Power Supply 135 200 μA All V = 0V or 3.3V, V supply current A T = –40°C to +85°C 200 μA DD V = 0V, V = 3.3V A S EN T = –40°C to +125°C 200 μA A 135 200 μA All V = 0V or 3.3V, V supply current A T = –40°C to +85°C 200 μA SS V = 0V, V = 3.3V, A S EN T = –40°C to +125°C 200 μA A
Note:
1. When VS is positive, VD is negative, and vice versa. 2. Specified by design, not production tested. PS508/PS509 Document Number DS41784 Rev 2-2 6 www.diodes.com June 2020 Diodes Incorporated
PS508/PS509 Electrical Characteristics: Dual Supply Cont. Symbol Parameters Conditions Min. Typ. Max. Units
171 310 ns V = 10V, R = 300Ω, t Transition time S L T = –40°C to +85°C 310 ns t C = 35pF, A L T = –40°C to +125°C 310 ns A t Break-before-make V = 10V, R = 300Ω, C = 35pF, T = –40°C to S L L A BBM time delay +125°C 30 75 ns V = 0V 0.9 pC Q Charge injection C = 1nF, R = 0Ω S J L S V = –15V to +15V ±2 pC S Nonadjacent channel to D, DA, DB -96 dB Off-isolation R = 50Ω, V = 1V , L S RMS f = 1MHz Adjacent channel to D, DA, DB -85 dB Channel-to-channel R = 50Ω, V = 1V , Nonadjacent channels -96 dB L S RMS crosstalk f = 1MHz Adjacent channels -88 dB C Input off-capacitance f = 1MHz, V = 0V 5 7 pF S(OFF) S PS508 24 30 pF C Output off-capacitance f = 1MHz, V = 0V D(OFF) S PS509 15 20 pF PS508 30 36 pF C Input/Output on-ca- = 0V D(ON) pacitance f = 1MHz, VS PS509 20 25 pF Power Supply 135 200 μA All V = 0V or 3.3V, V supply current A T = –40°C to +85°C 200 μA DD V = 0V, V = 3.3V A S EN T = –40°C to +125°C 200 μA A 135 200 μA All V = 0V or 3.3V, V supply current A T = –40°C to +85°C 200 μA SS V = 0V, V = 3.3V, A S EN T = –40°C to +125°C 200 μA A
Note:
1. When VS is positive, VD is negative, and vice versa. 2. Specified by design, not production tested. PS508/PS509 Document Number DS41784 Rev 2-2 6 www.diodes.com June 2020 Diodes Incorporated