Datasheet 1N4150 (Vishay)
| Fabricante | Vishay |
| Descripción | Small Signal Fast Switching Diodes |
| Páginas / Página | 3 / 1 — 1N4150. Small Signal Fast Switching Diodes. FEATURES. APPLICATIONS. … |
| Formato / tamaño de archivo | PDF / 76 Kb |
| Idioma del documento | Inglés |
1N4150. Small Signal Fast Switching Diodes. FEATURES. APPLICATIONS. DESIGN SUPPORT TOOLS. MECHANICAL DATA Case:. Weight:
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1N4150
www.vishay.com Vishay Semiconductors
Small Signal Fast Switching Diodes FEATURES
• Silicon epitaxial planar diode • Low forward voltage drop • AEC-Q101 qualified • High forward current capability • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
APPLICATIONS DESIGN SUPPORT TOOLS
click logo to get started • High speed switch and general purpose use in computer and industrial applications Models Available
MECHANICAL DATA Case:
DO-35 (DO-204AH)
Weight:
approx. 125 mg
Cathode band color:
black
Packaging codes / options:
TR/10K per 13" reel (52 mm tape), 50K/box TAP/10K per ammopack (52 mm tape), 50K/box
PARTS TABLE PART ORDERING CODE TYPE MARKING CIRCUIT CONFIGURATION REMARKS
1N4150 1N4150TR or 1N4150TAP 1N4150 Single Tape and reel / ammopack
ABSOLUTE MAXIMUM RATINGS
(Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Repetitive peak reverse voltage VRRM 50 V Reverse voltage VR 50 V Peak forward surge current tp = 1 μs IFSM 4 A Average peak forward current IFRM 600 mA Forward continuous current IF 300 mA Average forward current VR = 0 IF(AV) 150 mA l = 4 mm, TL = 45 °C Ptot 440 mW Power dissipation l = 4 mm, TL ≤ 25 °C Ptot 500 mW
THERMAL CHARACTERISTICS
(Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Thermal resistance junction to ambient air l = 4 mm, TL = constant RthJA 350 K/W Junction temperature Tj 175 °C Storage temperature range Tstg -65 to +175 °C Rev. 1.9, 06-Jul-17
1
Document Number: 85522 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Semiconductors
Small Signal Fast Switching Diodes FEATURES
• Silicon epitaxial planar diode • Low forward voltage drop • AEC-Q101 qualified • High forward current capability • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
APPLICATIONS DESIGN SUPPORT TOOLS
click logo to get started • High speed switch and general purpose use in computer and industrial applications Models Available
MECHANICAL DATA Case:
DO-35 (DO-204AH)
Weight:
approx. 125 mg
Cathode band color:
black
Packaging codes / options:
TR/10K per 13" reel (52 mm tape), 50K/box TAP/10K per ammopack (52 mm tape), 50K/box
PARTS TABLE PART ORDERING CODE TYPE MARKING CIRCUIT CONFIGURATION REMARKS
1N4150 1N4150TR or 1N4150TAP 1N4150 Single Tape and reel / ammopack
ABSOLUTE MAXIMUM RATINGS
(Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Repetitive peak reverse voltage VRRM 50 V Reverse voltage VR 50 V Peak forward surge current tp = 1 μs IFSM 4 A Average peak forward current IFRM 600 mA Forward continuous current IF 300 mA Average forward current VR = 0 IF(AV) 150 mA l = 4 mm, TL = 45 °C Ptot 440 mW Power dissipation l = 4 mm, TL ≤ 25 °C Ptot 500 mW
THERMAL CHARACTERISTICS
(Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Thermal resistance junction to ambient air l = 4 mm, TL = constant RthJA 350 K/W Junction temperature Tj 175 °C Storage temperature range Tstg -65 to +175 °C Rev. 1.9, 06-Jul-17
1
Document Number: 85522 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000