Datasheet AONS32310 (Alpha & Omega)

AONS32310 30V N-Channel MOSFET General Description Product Summary
• Trench Power MOSFET technology VDS 30V • Low RDS(ON) ID (at VGS=10V) 400A • Low Gate Charge RDS(ON) (at VGS=10V) < 1.05mΩ • High Current Capability RDS(ON) (at VGS=4.5V) < 1.43mΩ • RoHS and Halogen-Free Compliant
Applications
100% UIS Tested 100% Rg Tested • High performance ORing, Efuse • Ultra high current battery charge/discharge
DFN5X6
D
Top View Bottom View Top View
S 1 8 D S 2 7 D S 3 6 D G 4 5 D G PIN1 PIN1 S
Orderable Part Number Package Type Form Minimum Order Quantity
AONS32310 DFN 5x6 Tape & Reel 3000
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Maximum Units
Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V TC=25°C G 400 Continuous Drain ID Current TC=100°C 305 A Pulsed Drain Current C (≤10μS) IDM 1500 TA=25°C Continuous Drain 60 IDSM A Current TA=70°C 50 Avalanche Current C IAS 80 A Avalanche energy L=0.1mH C EAS 320 mJ TC=25°C 400 PD W Power Dissipation B TC=100°C 160 TA=25°C 6.2 PDSM W Power Dissipation A TA=70°C 4 Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C
Thermal Characteristics Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 15 20 °C/W RqJA Maximum Junction-to-Ambient A D Steady-State 40 50 °C/W Maximum Junction-to-Case Steady-State RqJC 0.26 0.31 °C/W Rev.4.0: May 2019 www.aosmd.com Page 1 of 6