Datasheet SiRA99DP (Vishay) - 5
| Fabricante | Vishay |
| Descripción | P-Channel 30 V (D-S) MOSFET |
| Páginas / Página | 9 / 5 — SiRA99DP. TYPICAL CHARACTERISTICS. Current Derating a. Power, … |
| Formato / tamaño de archivo | PDF / 251 Kb |
| Idioma del documento | Inglés |
SiRA99DP. TYPICAL CHARACTERISTICS. Current Derating a. Power, Junction-to-Case. Power, Junction-to-Ambient. Note
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SiRA99DP
www.vishay.com Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted) Axis Title 250 10000 200 ) 1000 150 rrent (A ne ne ine u C n 1st li 2nd li 2nd l 100 rai D 100 - I D 50 0 10 0 25 50 75 100 125 150 T - Case Temperature (°C) C
Current Derating a
Axis Title Axis Title 125 10000 3.0 10000 100 2.4 1000 ) 1000 ) 75 (W 1.8 (W ne ne ine ne er ne ine er ow 1st li ow P 2nd li 2nd l 1st li P 2nd li 50 2nd l 1.2 - - P 100 P 100 25 0.6 0 10 0 10 0 25 50 75 100 125 150 0 25 50 75 100 125 150 T - Case Temperature (°C) T - Ambient Temperature (°C) C A
Power, Junction-to-Case Power, Junction-to-Ambient Note
a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S19-0115-Rev. A, 04-Feb-2019
5
Document Number: 71023 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted) Axis Title 250 10000 200 ) 1000 150 rrent (A ne ne ine u C n 1st li 2nd li 2nd l 100 rai D 100 - I D 50 0 10 0 25 50 75 100 125 150 T - Case Temperature (°C) C
Current Derating a
Axis Title Axis Title 125 10000 3.0 10000 100 2.4 1000 ) 1000 ) 75 (W 1.8 (W ne ne ine ne er ne ine er ow 1st li ow P 2nd li 2nd l 1st li P 2nd li 50 2nd l 1.2 - - P 100 P 100 25 0.6 0 10 0 10 0 25 50 75 100 125 150 0 25 50 75 100 125 150 T - Case Temperature (°C) T - Ambient Temperature (°C) C A
Power, Junction-to-Case Power, Junction-to-Ambient Note
a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S19-0115-Rev. A, 04-Feb-2019
5
Document Number: 71023 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000