Datasheet FZT789A (Diodes) - 4

A Product Line of Diodes Incorporated FZT789A Electrical Characteristics
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage BVCBO -30 -40  V IC = -100µA Collector-Emitter Breakdown Voltage (Note 12) BVCEO -25 -35  V IC = -10mA Emitter-Base Breakdown Voltage BVEBO -7 -8.5  V IE = -100µA  <1 -100 nA V Collector Cut-Off Current CB = -15V ICBO   -10 µA VCB = -15V, Tamb = +100°C Collector Cut-Off Current ICES  <1 -100 nA VCE = -15V Emitter Cut-Off Current IEBO  <1 -100 nA VEB = -5.6V  -0.15 -0.25 IC = -1A, IB = -10mA Collector-Emitter Saturation Voltage (Note 12) VCE(sat) V  -0.30 -0.45 IC = -2A, IB = -20mA -0.30 -0.50 IC = -3A, IB = -100mA Base-Emitter Saturation Voltage (Note 12) VBE(sat)  -0.80 -1.0 V IC = -1A, IB = -10mA Base-Emitter Turn-On Voltage (Note 12) VBE(on)  -0.75 -1.1 V IC = -1A, VCE = -2V 300  800 IC = -10mA, VCE = -2V 250   I DC Current Gain (Note 12) C = -1A, VCE = -2V h  FE 200   IC = -2A, VCE = -2V 100   IC = -6A, VCE = -2V V Current Gain-Bandwidth Product f CE = -5V, IC = -50mA T 100   MHz f = 50MHz Turn-On Time ton  35  ns VCC = -10V, IC = -500mA Turn-Off Time toff  400  ns IB1 = IB2 = -50mA Input Capacitance Cibo  225  pF VEB = -0.5V, f = 1MHz Output Capacitance Cobo  25  pF VCB = -10V, f = 1MHz Note: 12. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%. FZT789A 4 of 7 April 2015 Document Number DS33168 Rev. 6 - 2
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