Datasheet FDN304P (ON Semiconductor) - 5
| Fabricante | ON Semiconductor |
| Descripción | P-Channel 1.8V Specified PowerTrench MOSFET |
| Páginas / Página | 8 / 5 — F DN30. Typical Characteristics. 4 P. Qg, GATE CHARGE (nC). -VDS, DRAIN … |
| Revisión | B |
| Formato / tamaño de archivo | PDF / 269 Kb |
| Idioma del documento | Inglés |
F DN30. Typical Characteristics. 4 P. Qg, GATE CHARGE (nC). -VDS, DRAIN TO SOURCE VOLTAGE (V)
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F DN30 Typical Characteristics 4 P
5 2100 f = 1MHz ID = -2.4A VDS = -5V -10V 1800 VGS = 0 V 4 CISS -15V 1500 3 1200 900 2 600 1 COSS 300 CRSS 0 0 0 2 4 6 8 10 12 14 0 5 10 15 20
Qg, GATE CHARGE (nC) -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.
100 20 SINGLE PULSE RθJA = 270°C/W RDS(ON) TA = 25°C 10 1ms 15 10ms 100ms 1 10 1s 10s VGS =-4.5V DC 0.1 SINGLE PULSE 5 RθJA = 270oC/W TA = 25oC 0.01 0 0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000
-VDS, DRAIN-SOURCE VOLTAGE (V) t1, TIME (sec) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation.
1 D = 0.5 0.2 RθJA(t) = r(t) + RθJA 0.1 Rθ 0.1 JA = 270 °C/W 0.05 0.02 P(pk) 0.01 t1 0.01 t2 SINGLE PULSE TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000
t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design.
FDN304P Rev C(W)
5 2100 f = 1MHz ID = -2.4A VDS = -5V -10V 1800 VGS = 0 V 4 CISS -15V 1500 3 1200 900 2 600 1 COSS 300 CRSS 0 0 0 2 4 6 8 10 12 14 0 5 10 15 20
Qg, GATE CHARGE (nC) -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.
100 20 SINGLE PULSE RθJA = 270°C/W RDS(ON) TA = 25°C 10 1ms 15 10ms 100ms 1 10 1s 10s VGS =-4.5V DC 0.1 SINGLE PULSE 5 RθJA = 270oC/W TA = 25oC 0.01 0 0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000
-VDS, DRAIN-SOURCE VOLTAGE (V) t1, TIME (sec) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation.
1 D = 0.5 0.2 RθJA(t) = r(t) + RθJA 0.1 Rθ 0.1 JA = 270 °C/W 0.05 0.02 P(pk) 0.01 t1 0.01 t2 SINGLE PULSE TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000
t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design.
FDN304P Rev C(W)