Datasheet FS8205 (Fortune Semiconductor) - 5

FS8205 9. Typical Characteristics
On-Region characteristics @ Ta=25Deg On-Region characteristics @ Ta=125Deg 25 25 15 2.5V
3.0V 10 3.5V
4.0V 5 4.5V 0 Id, Drain Current ( A ) 20
2.0V 2.0V
15 2.5V
3.0V 10 3.5V
4.0V 5 RT
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y Id, Drain Current ( A ) 20 4.5V 0 0
-5 0.5 1 1.5 2 0 0.5 Vds, Drain to Source Voltage ( V ) 1.5 2 Vds, Drain to Source Voltage ( V ) Fig 2. Typical Output Characteristics On-Resistance Variation with Temperature Gate Threshold Voltage Temperature Coefficient Vgs=4.5V, Ids=4A Vgs=Vdg, Ids=250uA 1.4 1.4 1.2 1.2 Vth -Normalized 1 0.8
0.6 FO 0.4 1 0.8
0.6
0.4
0.2 0.2 0 0 -50 Threshold Voltage Drain -Source On-Resistance Fig 1. Typical Output Characteristics Rds(on) -Normalized 1 -5 0 50 100 150 -50 0 50 100 150 Temperature ( Deg ) Temperature ( Deg ) Fig 3. Normalized On-Resistance Fig 4. Gate Threshold Variation with
Temperature Forward Characteristic of Rev erse Diode 2.5 2 1.5
Is (A) Ta=25Deg 1 0.5 Fo 0 Ta=125Deg -0.3 0.2 0.7 1.2 Vsd, Soucre to Drain Voltage ( V ) Fig 5. Forward Characteristic of Reverse Diode Rev. 1.9 5/5