Datasheet BYD17 (NXP) - 3

Philips Semiconductors Product specification General purpose BYD17 series controlled avalanche rectifiers
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
IF(AV) average forward current Ttp = 105 °C; − 1.5 A averaged over any 20 ms period; see Figs 2 and 4 Tamb = 65 °C; PCB mounting (see − 0.6 A Fig.9); averaged over any 20 ms period; see Figs 3 and 4 IFSM non-repetitive peak forward current t = 10 ms half sinewave; − 20 A Tj = Tj max prior to surge; VR = VRRMmax ERSM non-repetitive peak reverse avalanche L = 120 mH; Tj = Tj max prior to − 7 mJ energy surge; inductive load switched off Tstg storage temperature −65 +175 °C Tj junction temperature see Fig.5 −65 +175 °C
ELECTRICAL CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VF forward voltage IF = 1 A; Tj = Tj max; see Fig.6 − − 0.93 V IF = 1 A; see Fig.6 − − 1.05 V V(BR)R reverse avalanche IR = 0.1 mA breakdown voltage BYD17D 225 − − V BYD17G 450 − − V BYD17J 650 − − V BYD17K 900 − − V BYD17M 1100 − − V IR reverse current VR = VRRMmax; see Fig.7 − − 1 µA VR = VRRMmax; Tj = 165 °C; see Fig.7 − − 100 µA trr reverse recovery time when switched from IF = 0.5 A to IR = 1 A; − 3 − µs measured at IR = 0.25 A; see Fig.10 Cd diode capacitance VR = 0 V; f = 1 MHz; see Fig.8 − 21 − pF
THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-tp thermal resistance from junction to tie-point 30 K/W Rth j-a thermal resistance from junction to ambient note 1 150 K/W
Note
1. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥40 µm, see Fig.9. For more information please refer to the “General Part of associated Handbook”. 1999 Nov 11 3