Datasheet ZXTP56020FDBQ (Diodes) - 4

ZXTP56020FDBQ Electrical Characteristics – Q1 & Q2
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Conditions
Collector-Base Breakdown Voltage BVCBO -20   V IC = -100µA Collector-Emitter Breakdown Voltage (Note 12) BVCEO -20   V IC = -10mA Emitter-Base Breakdown Voltage BVEBO -7   V IE = -100µA Collector-Base Cutoff Current   -100 nA VCB = -16V, IE = 0 I CBO   -50 µA VCB = -16V, IE = 0, TA = +150°C Emitter-Base Cutoff Current IEBO   -100 nA VEB = -5.6V, IC = 0 250   VCE = -2V, IC = -100mA 210   VCE = -2V, IC = -500mA DC Current Gain (Note 12) h 170    FE VCE = -2V, IC = -700mA 160   VCE = -2V, IC = -1A 100   VCE = -2V, IC = -2A   -110 IC = -500mA, IB = -50mA   -220 IC = -1A, IB = -50mA Collector-Emitter Saturation Voltage (Note 12) VCE(SAT) mV   -200 IC = -0.7A, IB = -7mA   -390 IC = -2A, IB = -200mA Equivalent On-Resistance (Note 12) RCE(SAT)   220 mΩ IE = -1A, IB = -50mA   -1 IC = -0.5A, IB = -50mA Base-Emitter Saturation Voltage (Note 12) VBE(SAT)   -1.1 V IC = -1A, IB = -50mA   -1.25 IC = -2A, IB = -200mA Base-Emitter Turn-on Voltage (Note 12) VBE(ON)   -0.9 V VCE = -2V, IC = -0.5A Turn-On Time tON  60  ns IC = -1A, IB1 = -IB2 = 50mA; Delay Time tD  10  ns TA = +25°C Rise Time tR  50  ns Note: 12. Measured under pulsed conditions. Pulse width  300µs. Duty cycle  2%. ZXTP56020FDBQ 4 of 7 April 2017 Datasheet number: DS38567 Rev.1 - 2
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