Datasheet ZXTP56060FDBQ (Diodes) - 5
| Fabricante | Diodes |
| Descripción | 60V Dual PNP LOW VCE(sat) Transistor |
| Páginas / Página | 8 / 5 — ZXTP56060FDBQ. Typical Electrical Characteristics. Vce=. T = 25°C. v I. … |
| Formato / tamaño de archivo | PDF / 502 Kb |
| Idioma del documento | Inglés |
ZXTP56060FDBQ. Typical Electrical Characteristics. Vce=. T = 25°C. v I. CE(SAT). V =2V. BE(ON). I /I = 20. C B. I /I =20. BE(SAT)
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ZXTP56060FDBQ Typical Electrical Characteristics
(@TA = +25°C, unless otherwise specified.) 600
Vce=
VCE
2V T = 25°C
= 2V 4
am
T
b
A = 25°C 500 50mA (A) 45mA 400 100°C rent 3 40mA 25mA in ur 30mA 20mA Ga 35mA 300 C 15mA 25°C tor 2 h FE 10mA 200 lec ol 1 5mA 100 -55°C I C C 0 0 1 10 100 1k 10k 0 1 2 3 4 5 I Collector Current (mA) V (V) C CE(SAT) h
v I I v V FE C C CE(SAT)
1.2 3.0
V =2V
20mA
T = 25°C CE am
T
b
A = 25°C 18mA 1.0 2.5 (A) 16mA 12mA 14mA 0.8 rent 2.0 10mA (V) 8mA ur N) C O 0.6 -55°C 1.5 6mA tor V BE( 0.4 25°C lec 1.0 4mA ol 0.2 100°C C 0.5 2mA I C 0. 0. 0 1 1 10 100 1000 10000 0.00 1 2 3 4 5 6 I Collector Current (mA) V (V) C CE(SAT)
V v I I v V BE(ON) C C CE(SAT)
1.2 1
I /I = 20 C B I /I =20 C
B 1.0 100°C 0.1 V) 0.8 ( (V) SAT -55°C SAT 0.6 V BE( V CE( 0.01 25°C 25°C -55°C 0.4 100°C 0.2 0.001 0.1 1 10 100 1000 10000 0.1 1 10 100 1000 10000 I Collector Current (mA) I Collector Current (mA) C
V v I
C
V v I BE(SAT) C CE(SAT) C
ZXTP56060FDBQ 5 of 8 17 February 2020 Datasheet number: DS39605 Rev. 2 - 2
www.diodes.com
© Diodes Incorporated Document Outline Mechanical Data Description This bipolar junction transistors (BJT) is designed to meet the stringent requirements of automotive applications. Features BVCEO > -60V Application Matrix LED Lighting Power Management Characteristic Characteristic Marking Information 2D9 YWX 2D9 = Product Type Marking Code Y = Year: 0~9 W = Week: A~Z: 1~26 week; a~z: 27~52 week; z represents 52 and 53 week X = A~Z: Internal code Package Outline Dimensions Suggested Pad Layout
(@TA = +25°C, unless otherwise specified.) 600
Vce=
VCE
2V T = 25°C
= 2V 4
am
T
b
A = 25°C 500 50mA (A) 45mA 400 100°C rent 3 40mA 25mA in ur 30mA 20mA Ga 35mA 300 C 15mA 25°C tor 2 h FE 10mA 200 lec ol 1 5mA 100 -55°C I C C 0 0 1 10 100 1k 10k 0 1 2 3 4 5 I Collector Current (mA) V (V) C CE(SAT) h
v I I v V FE C C CE(SAT)
1.2 3.0
V =2V
20mA
T = 25°C CE am
T
b
A = 25°C 18mA 1.0 2.5 (A) 16mA 12mA 14mA 0.8 rent 2.0 10mA (V) 8mA ur N) C O 0.6 -55°C 1.5 6mA tor V BE( 0.4 25°C lec 1.0 4mA ol 0.2 100°C C 0.5 2mA I C 0. 0. 0 1 1 10 100 1000 10000 0.00 1 2 3 4 5 6 I Collector Current (mA) V (V) C CE(SAT)
V v I I v V BE(ON) C C CE(SAT)
1.2 1
I /I = 20 C B I /I =20 C
B 1.0 100°C 0.1 V) 0.8 ( (V) SAT -55°C SAT 0.6 V BE( V CE( 0.01 25°C 25°C -55°C 0.4 100°C 0.2 0.001 0.1 1 10 100 1000 10000 0.1 1 10 100 1000 10000 I Collector Current (mA) I Collector Current (mA) C
V v I
C
V v I BE(SAT) C CE(SAT) C
ZXTP56060FDBQ 5 of 8 17 February 2020 Datasheet number: DS39605 Rev. 2 - 2
www.diodes.com
© Diodes Incorporated Document Outline Mechanical Data Description This bipolar junction transistors (BJT) is designed to meet the stringent requirements of automotive applications. Features BVCEO > -60V Application Matrix LED Lighting Power Management Characteristic Characteristic Marking Information 2D9 YWX 2D9 = Product Type Marking Code Y = Year: 0~9 W = Week: A~Z: 1~26 week; a~z: 27~52 week; z represents 52 and 53 week X = A~Z: Internal code Package Outline Dimensions Suggested Pad Layout