Datasheet AP64352Q (Diodes) - 7

AP64352Q Typical Performance Characteristics
(AP64352Q @ TA = +25°C, VIN = 12V, VOUT = 5V, fSW = 500kHz (RT = 200kΩ ± 1%), CSS = 10nF, unless otherwise specified.) VOUT = 5V, L = 5.5μH VOUT = 3.3V, L = 4.7μH VOUT = 5V, L = 5.5μH VOUT = 3.3V, L = 4.7μH 100 100 95 95 90 90
) )
85
%
85
( % (
80 80
ncy
75
ncy
75
ei ei c
70
i c
70
f i f f
65
f E
65
E
60 60 55 55 50 50 0.001 0.010 0.100 1.000 10.000 0.001 0.010 0.100 1.000 10.000
IOUT (A) IOUT (A) Figure 4. Efficiency vs. Output Current, VIN = 12V Figure 5. Efficiency vs. Output Current, VIN = 24V
IOUT = 0A IOUT = 0.5A IOUT = 1.5A VIN = 12V VIN = 24V IOUT = 2.5A IOUT = 3.5A 4.970 5.04 4.965 5.02 4.960 5.00 4.955
) )
4.98
V(
4.950
V (
4.96
T
4.945
T
4.94
OU
4.940
OU
4.92
V V
4.935 4.90 4.88 4.930 4.86 4.925 4.84 4.920 5 10 15 20 25 30 35 40 45 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VIN (V) IOUT (A) Figure 6. Line Regulation Figure 7. Load Regulation
0.802 High-Side MOSFET Low-Side MOSFET 0.801 0.800 120 110 0.799 100
)
0.798
V
90
( Ω)
0.797 80
(m FBV
0.796 70
ON)(
60 0.795
DSR
50 0.794 40 0.793 30 0.792 20 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
Temperature (°C) Temperature (°C) Figure 8. Feedback Voltage vs. Temperature Figure 9. Power MOSFET RDS(ON) vs. Temperature
AP64352Q 7 of 21 June 2020 Document number: DS42747 Rev. 1 - 2
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