Datasheet AP64351Q (Diodes) - 5

AP64351Q Absolute Maximum Ratings
(Note 4) (@ TA = +25°C, unless otherwise specified.)
Symbol Parameter Rating Unit
-0.3 to +42.0 (DC) VIN Supply Pin Voltage V -0.3 to +45.0 (400ms) VBST Bootstrap Pin Voltage VSW - 0.3 to VSW + 6.0 V VEN Enable/UVLO Pin Voltage -0.3 to +42.0 V VSS Soft-Start Pin Voltage -0.3 to +6.0 V VFB Feedback Pin Voltage -0.3 to +6.0 V VCOMP Compensation Pin Voltage -0.3 to +6.0 V -0.3 to VIN + 0.3 (DC) VSW Switch Pin Voltage V -2.5 to VIN + 2.0 (20ns) TST Storage Temperature -65 to +150 °C TJ Junction Temperature +160 °C TL Lead Temperature +260 °C
ESD Susceptibility (Note 5)
HBM Human Body Model ±2000 V CDM Charged Device Model ±500 V Notes: 4. Stresses greater than the Absolute Maximum Ratings specified above can cause permanent damage to the device. These are stress ratings only; functional operation of the device at these or any other conditions exceeding those indicated in this specification is not implied. Device reliability can be affected by exposure to absolute maximum rating conditions for extended periods of time. 5. Semiconductor devices are ESD sensitive and can be damaged by exposure to ESD events. Suitable ESD precautions should be taken when handling and transporting these devices.
Thermal Resistance
(Note 6)
Symbol Parameter Rating Unit
θJA Junction to Ambient SO-8EP 45 °C/W θJC Junction to Case SO-8EP 5 °C/W Note: 6. Test condition for SO-8EP: Device mounted on FR-4 substrate, four-layer PC board, 2oz copper, with minimum recommended pad layout.
Recommended Operating Conditions
(Note 7) (@ TA = +25°C, unless otherwise specified.)
Symbol Parameter Min Max Unit
VIN Supply Voltage 3.8 40 V VOUT Output Voltage 0.8 VIN V TA Operating Ambient Temperature -40 +125 °C TJ Operating Junction Temperature -40 +150 °C Note: 7. The device function is not guaranteed outside of the recommended operating conditions. AP64351Q 5 of 26 June 2020 Document number: DS42746 Rev. 1 - 2
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