Datasheet SiZF300DT (Vishay) - 6

FabricanteVishay
DescripciónDual N-Channel 30 V (D-S) MOSFET with Schottky Diode
Páginas / Página13 / 6 — SiZF300DT. CHANNEL-1 TYPICAL CHARACTERISTICS. Current Derating a. Power, …
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SiZF300DT. CHANNEL-1 TYPICAL CHARACTERISTICS. Current Derating a. Power, Junction-to-Case. Note

SiZF300DT CHANNEL-1 TYPICAL CHARACTERISTICS Current Derating a Power, Junction-to-Case Note

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SiZF300DT
www.vishay.com Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted) Axis Title Axis Title 100 10000 50 10000 80 40 ) 1000 1000 ) 60 30 rrent (A ne ne ine u ine ne ne r (W C e n 1st li w 2nd l 1st li 40 2nd li 2nd l o 2nd li rai 20 P D 100 100 - I D 20 10 0 10 0 10 0 25 50 75 100 125 150 0 25 50 75 100 125 150 T - Case Temperature (°C) T - Case Temperature (°C) C C 2nd line 2nd line
Current Derating a Power, Junction-to-Case Note
a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S18-0479-Rev. A, 30-Apr-2018
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Document Number: 76288 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000