Datasheet 2N2906, 2N2907 (CDIL)

FabricanteCDIL
DescripciónPNP Silicon Planar Switching Transistor
Páginas / Página4 / 1 — PNP SILICON PLANAR SWITCHING TRANSISTORS. 2N2906 2N2907. TO-18 Metal Can …
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PNP SILICON PLANAR SWITCHING TRANSISTORS. 2N2906 2N2907. TO-18 Metal Can Package. Switching and Linear Application

Datasheet 2N2906, 2N2907 CDIL

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP SILICON PLANAR SWITCHING TRANSISTORS 2N2906 2N2907 TO-18 Metal Can Package Switching and Linear Application ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector Emitter Voltage
VCEO 40 V
Collector Base Voltage
VCBO 60 V
Emitter Base Voltage
VEBO 5 V
Collector Current Continuous
IC 600 mA
Power Dissipation @ Ta=25ºC
PD 400 mW
Derate Above 25ºC
2.28 mW/ ºC
Power Dissipation @ Tc=25ºC
PD 1.8 W
Derate Above 25ºC
10.3 mW/ ºC
Operating and Storage Junction
T - 65 to +200 ºC
Temperature Range
j, Tstg
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise ) DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNIT Collector Emitter Voltage
*VCEO IC=10mA, IB=0 40 V
Collector Base Voltage
VCBO IC=10µA, IE=0 60 V
Emitter Base Voltage
VEBO IE=10µA, IC=0 5 V
Collector Cut Off Current
ICEX VCE=30V, VBE=0.5V 50 nA
Collector Cut Off Current
ICBO VCB=50V, IE=0 20 nA VCB=50V, IE=0, 20 µA Ta=150ºC
Base Current
IB VCE=30V, VBE=0.5V 50 nA
2N2906 2N2907 DC Current Gain
hFE IC=0.1mA, VCE=10V >20 >35 IC=1mA, VCE=10V >25 >50 IC=10mA, VCE=10V >35 >75 *IC=150mA, VCE=10V 40 - 120 100 - 300 *IC=500mA, VCE=10V >20 >30
*Pulse Test: Pulse Width < 300µs, Duty Cycle < 2% 2N2906_2907Rev010303E
Continental Device India Limited
Data Sheet
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