Datasheet FSD176MRT (ON Semiconductor) - 6
Fabricante | ON Semiconductor |
Descripción | Green-Mode Fairchild Power Switch (FPS ) |
Páginas / Página | 19 / 6 — TJ = 25°C unless otherwise specified. Symbol Parameter Conditions Min. … |
Revisión | A |
Formato / tamaño de archivo | PDF / 849 Kb |
Idioma del documento | Inglés |
TJ = 25°C unless otherwise specified. Symbol Parameter Conditions Min. Typ. Max. Unit SenseFET Section
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TJ = 25°C unless otherwise specified. Symbol Parameter Conditions Min. Typ. Max. Unit SenseFET Section
BVDSS Drain-Source Breakdown Voltage VCC = 0 V, ID = 250 μA IDSS Zero-Gate-Voltage Drain Current VDS = 650 V, TA = 25°C RDS(ON) Drain-Source On-State Resistance 650 V
250 μA 1.6 Ω VGS=10 V, ID =1A 1.3
674 pF CISS Input Capacitance VDS = 25 V, VGS = 0 V,
f=1 MHz COSS Output Capacitance(12) VDS = 25 V, VGS = 0 V,
f=1 MHz 93 pF tr Rise Time VDS = 325 V, ID = 4 A,
RG=25 Ω 30 ns tf Fall Time VDS = 325 V, ID = 4 A,
RG=25 Ω 26 ns td(on) Turn-On Delay VDS = 325 V, ID = 4 A,
RG=25 Ω 16 ns td(off) Turn-Off Delay VDS = 325 V, ID= 4 A,
RG=25 Ω 39 ns (12) Control Section
fS
ΔfS Switching Frequency(12) VCC = 14 V, VFB = 4 V
(12) Switching Frequency Variation -25°C < TJ < 125°C DMAX Maximum Duty Ratio VCC = 14 V, VFB = 4 V DMIN Minimum Duty Ratio VCC = 14 V, VFB = 0 V IFB
VSTART
VSTOP
tS/S Feedback Source Current
UVLO Threshold Voltage
Internal Soft-Start Time 61
61 67 73 kHz ±5 ±10 % 67 73 % FSD176MRT — Green-Mode Fairchild Power Switch (FPS™) Electrical Characteristics % VFB=0 V 65 90 115 μA VFB = 0 V, VCC Sweep 11 12 13 V After Turn-on, VFB = 0 V 7.0 7.5 8.0 V VSTR = 40 V, VCC Sweep 15 ms Burst-Mode Section
VBURH
VBURL Burst-Mode Voltage VCC = 14 V, VFB Sweep 0.39 0.45 0.51 0.26 0.30 0.34 VHys 150 V
V
mV Protection Section
ILIM Peak Drain Current Limit di/dt = 300 mA/μs 3.15 3.50 3.85 A VSD Shutdown Feedback Voltage VCC = 14 V, VFB Sweep 6.45 7.00 7.55 V VCC = 14 V, VFB = 4 V 1.2 2.0 2.8 μA VCC Sweep 23.0 24.5 26.0 V 0.7 1.0 1.3 μs 1.8 2.0 2.2 V 2.0 2.5 3.0 μs 130 140 150 °C IDELAY Shutdown Delay Current
(12)(14) tLEB Leading-Edge Blanking Time VOVP Over-Voltage Protection tOSP
VOSP
tOSP_FB
TSD
THys Output-Short
Protection(12) Threshold Time
Threshold VFB
VFB Blanking Time Thermal Shutdown Temperature(12) 300 OSP Triggered when
tONVOSP
(Lasts Longer than tOSP_FB)
Shutdown Temperature
Hysteresis 60 ns °C Continued on the following page…
© 2011 Fairchild Semiconductor Corporation
FSD176MRT • Rev. 1.0.1 www.fairchildsemi.com
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