Datasheet LTC4362-1, LTC4362-2 (Analog Devices) - 5
| Fabricante | Analog Devices |
| Descripción | 1.2A Overvoltage/Overcurrent Protector |
| Páginas / Página | 14 / 5 — TYPICAL PERFORMANCE CHARACTERISTICS. Specifications are at TA = 25°C, VIN … |
| Revisión | B |
| Formato / tamaño de archivo | PDF / 649 Kb |
| Idioma del documento | Inglés |
TYPICAL PERFORMANCE CHARACTERISTICS. Specifications are at TA = 25°C, VIN = 5V, VON = 0V unless otherwise noted
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LTC4362-1/LTC4362-2
TYPICAL PERFORMANCE CHARACTERISTICS Specifications are at TA = 25°C, VIN = 5V, VON = 0V unless otherwise noted. Overvoltage Turn-Off Delay vs Overdrive (V Normal Start-Up Sequence Turn-On Ramp-Up OVDRV)
8 VIN = STEP 5V TO (VIN(OV) + VOVDRV) V V IN IN 5V/DIV 5V/DIV 6 (µs) V V OUT OUT 4 5V/DIV 5V/DIV t OFF(OV) 2 ICABLE ICABLE 0.5A/DIV 0.5A/DIV 0 0 0.5 1 1.5 2 2.5 20ms/DIV 436212 G11 1ms/DIV 436212 G12 VOVDRV (V) FIGURE 4 CIRCUIT FIGURE 4 CIRCUIT 436212 G10 RIN = 150mΩ, LIN = 0.7µH RIN = 150mΩ, LIN = 0.7µH LOAD = 10Ω, COUT = 10µF LOAD = 10Ω, COUT = 10µF
PIN FUNCTIONS GATEP:
Gate Drive for External P-channel MOSFET. GATEP An internal 5μA current pulls ON down to ground. Connect connects to the gate of an optional external P-channel to ground or leave open if unused. MOSFET to protect against negative voltages at IN.
OUT:
Source of Internal N-channel MOSFET. Connect to Internally clamped to 5.8V below VIN. An internal 2M load. resistor connects this pin to ground. Connect to IN if unused.
PWRGD:
Power Good Status. Open-drain output with internal 500k resistive pull-up to OUT. Pulls low 65ms
GND:
Device Ground. after the MOSFET gate ramps above its internal gate high
IN:
Supply Voltage Input. Connect this pin to the input threshold. power supply. This pin has an overvoltage threshold of
SENSE, Exposed Pad:
Current Sense Node and Internal 5.8V. After an overvoltage event, this pin must fall below N-channel MOSFET Drain. An internal sense resistor VIN(OV) – ∆VOV to release the overvoltage lockout. During between IN and SENSE is used to implement the 1.5A lockout, the internal N-channel MOSFET remains off and overcurrent threshold. The exposed pad is connected to the PWRGD pull-down releases. SENSE and must be soldered to an electrically isolated
ON:
On Control Input. A logic low at ON enables the printed circuit board trace to properly transfer the heat LTC4362. A logic high at ON activates a low current pull- out of the package. To disable the overcurrent function, down on the gate of the internal N-channel MOSFET and connect SENSE and the exposed pad to IN. causes the LTC4362 to enter a low current sleep mode. Rev. B For more information www.analog.com 5 Document Outline Features Applications Typical Application Description Absolute Maximum Ratings order information Pin Configuration Electrical Characteristics Typical Performance Characteristics Pin Functions Block Diagram Operation Applications Information Package Description Revision History Typical Application Related Parts
TYPICAL PERFORMANCE CHARACTERISTICS Specifications are at TA = 25°C, VIN = 5V, VON = 0V unless otherwise noted. Overvoltage Turn-Off Delay vs Overdrive (V Normal Start-Up Sequence Turn-On Ramp-Up OVDRV)
8 VIN = STEP 5V TO (VIN(OV) + VOVDRV) V V IN IN 5V/DIV 5V/DIV 6 (µs) V V OUT OUT 4 5V/DIV 5V/DIV t OFF(OV) 2 ICABLE ICABLE 0.5A/DIV 0.5A/DIV 0 0 0.5 1 1.5 2 2.5 20ms/DIV 436212 G11 1ms/DIV 436212 G12 VOVDRV (V) FIGURE 4 CIRCUIT FIGURE 4 CIRCUIT 436212 G10 RIN = 150mΩ, LIN = 0.7µH RIN = 150mΩ, LIN = 0.7µH LOAD = 10Ω, COUT = 10µF LOAD = 10Ω, COUT = 10µF
PIN FUNCTIONS GATEP:
Gate Drive for External P-channel MOSFET. GATEP An internal 5μA current pulls ON down to ground. Connect connects to the gate of an optional external P-channel to ground or leave open if unused. MOSFET to protect against negative voltages at IN.
OUT:
Source of Internal N-channel MOSFET. Connect to Internally clamped to 5.8V below VIN. An internal 2M load. resistor connects this pin to ground. Connect to IN if unused.
PWRGD:
Power Good Status. Open-drain output with internal 500k resistive pull-up to OUT. Pulls low 65ms
GND:
Device Ground. after the MOSFET gate ramps above its internal gate high
IN:
Supply Voltage Input. Connect this pin to the input threshold. power supply. This pin has an overvoltage threshold of
SENSE, Exposed Pad:
Current Sense Node and Internal 5.8V. After an overvoltage event, this pin must fall below N-channel MOSFET Drain. An internal sense resistor VIN(OV) – ∆VOV to release the overvoltage lockout. During between IN and SENSE is used to implement the 1.5A lockout, the internal N-channel MOSFET remains off and overcurrent threshold. The exposed pad is connected to the PWRGD pull-down releases. SENSE and must be soldered to an electrically isolated
ON:
On Control Input. A logic low at ON enables the printed circuit board trace to properly transfer the heat LTC4362. A logic high at ON activates a low current pull- out of the package. To disable the overcurrent function, down on the gate of the internal N-channel MOSFET and connect SENSE and the exposed pad to IN. causes the LTC4362 to enter a low current sleep mode. Rev. B For more information www.analog.com 5 Document Outline Features Applications Typical Application Description Absolute Maximum Ratings order information Pin Configuration Electrical Characteristics Typical Performance Characteristics Pin Functions Block Diagram Operation Applications Information Package Description Revision History Typical Application Related Parts