Datasheet IRLZ34N (International Rectifier)
| Fabricante | International Rectifier |
| Descripción | HEXFET Power MOSFET, VDSS = 55 V, RDS(on) = 0.035 Ω, ID = 30 A, TO-220AB |
| Páginas / Página | 9 / 1 — Description. Absolute Maximum Ratings. Parameter. Max. Units. Thermal … |
| Formato / tamaño de archivo | PDF / 112 Kb |
| Idioma del documento | Inglés |
Description. Absolute Maximum Ratings. Parameter. Max. Units. Thermal Resistance. Min. Typ
Versión de texto del documento
PD - 9.1307B IRLZ34N HEXFET® Power MOSFET l Logic-Level Gate Drive l Advanced Process Technology D l Dynamic dv/dt Rating VDSS = 55V l 175°C Operating Temperature l Fast Switching RDS(on) = 0.035Ω G l Fully Avalanche Rated ID = 30A
Description
S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance TO-220AB and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
Absolute Maximum Ratings Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 30 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 21 A IDM Pulsed Drain Current 110 PD @TC = 25°C Power Dissipation 68 W Linear Derating Factor 0.45 W/°C VGS Gate-to-Source Voltage ±16 V EAS Single Pulse Avalanche Energy 110 mJ IAR Avalanche Current 16 A EAR Repetitive Avalanche Energy 6.8 mJ dv/dt Peak Diode Recovery dv/dt 5.0 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case) Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)
Thermal Resistance Parameter Min. Typ. Max. Units
RθJC Junction-to-Case –––– –––– 2.2 RθCS Case-to-Sink, Flat, Greased Surface –––– 0.50 –––– °C/W RθJA Junction-to-Ambient –––– –––– 62 8/25/97
Description
S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance TO-220AB and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
Absolute Maximum Ratings Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 30 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 21 A IDM Pulsed Drain Current 110 PD @TC = 25°C Power Dissipation 68 W Linear Derating Factor 0.45 W/°C VGS Gate-to-Source Voltage ±16 V EAS Single Pulse Avalanche Energy 110 mJ IAR Avalanche Current 16 A EAR Repetitive Avalanche Energy 6.8 mJ dv/dt Peak Diode Recovery dv/dt 5.0 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case) Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)
Thermal Resistance Parameter Min. Typ. Max. Units
RθJC Junction-to-Case –––– –––– 2.2 RθCS Case-to-Sink, Flat, Greased Surface –––– 0.50 –––– °C/W RθJA Junction-to-Ambient –––– –––– 62 8/25/97