Datasheet ADA4530-1 (Analog Devices) - 6

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ADA4530-1 Data Sheet 10 V NOMINAL ELECTRICAL CHARACTERISTICS
VSY = 10 V, VCM = VSY/2, TA = 25°C, unless otherwise noted. Typical specifications are equal to the average of the distribution from characterization, unless otherwise noted. Minimum and maximum specifications are tested in production, unless otherwise noted.
Table 2. Parameter1 Symbol Test Conditions/Comments Min Typ Max Unit
INPUT CHARACTERISTICS Input Bias Current2, 3 IB RH < 50% <1 ±20 fA −40°C < TA < +85°C, RH < 50% ±20 fA −40°C < TA < +125°C, RH < 50% ±250 fA Input Offset Current3 IOS RH < 50% <1 ±20 fA −40°C < TA < +125°C, RH < 50% ±150 fA Input Offset Voltage2, 4 VOS +8 ±40 µV VCM = 1.5 V to 8.5 V +9 ±50 µV VCM = 1.5 V to 8.5 V, 0°C < TA < 125°C ±70 µV VCM = 1.5 V to 8.5 V, −40°C < TA < 0°C ±150 µV VCM = 0 V to 8.5 V ±300 µV Offset Voltage Drift2, 4 ΔVOS/ΔT 0°C < TA < 125°C +0.13 ±0.5 µV/°C −40°C < TA < 0°C −0.7 ±2.8 µV/°C Input Voltage Range IVR 0 8.5 V Common-Mode Rejection Ratio CMRR VCM = 1.5 V to 8.5 V 105 114 dB −40°C < TA < +125°C 100 dB VCM = 0 V to 8.5 V 87 dB Large Signal Voltage Gain AVO RL = 2 kΩ to VCM, VOUT = 0.5 V to 9.5 V 125 150 dB −40°C < TA < +125°C 125 dB Input Resistance RIN −40°C < TA < +125°C >100 TΩ Input Capacitance CIN 8 pF OUTPUT CHARACTERISTICS Output Voltage High VOH RL = 10 kΩ to VCM 9.96 9.97 V −40°C < TA < +125°C 9.94 V RL = 2 kΩ to VCM 9.93 9.87 V −40°C < TA < +125°C 9.75 V Output Voltage Low VOL RL = 10 kΩ to VCM 15 40 mV −40°C < TA < +125°C 60 mV RL = 2 kΩ to VCM 70 170 mV −40°C < TA < +125°C 250 mV Short-Circuit Current ISC Source 15 mA Sink −30 mA Closed-Loop Output Impedance ZOUT f = 1 MHz, AV = 1 20 Ω POWER SUPPLY Power Supply Rejection Ratio PSRR VSY = 4.5 V to 16 V 130 150 dB −40°C < TA < +125°C 130 dB Supply Current ISY IOUT = 0 mA 0.9 1.3 mA −40°C < TA < +125°C 1.5 mA DYNAMIC PERFORMANCE Slew Rate SR RL = 10 kΩ, CL = 10 pF, AV = 1 1.4 V/µs Gain Bandwidth Product GBP VIN = 10 mV rms, RL = 10 kΩ, CL = 10 pF, 2 MHz AV = 100 Unity-Gain Crossover UGC VIN = 10 mV rms, RL = 10 kΩ, CL = 10 pF, 2 MHz AVO = 1 −3 dB Closed-Loop Bandwidth f−3dB VIN = 10 mV rms, RL = 10 kΩ, CL = 10 pF, 6 MHz AV = 1 Phase Margin ΦM VIN = 10 mV rms, RL = 10 kΩ, CL = 10 pF, 62 Degrees AVO = 1 Rev. B | Page 6 of 52 Document Outline FEATURES APPLICATIONS PIN CONNECTION DIAGRAM GENERAL DESCRIPTION TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS 5 V NOMINAL ELECTRICAL CHARACTERISTICS 10 V NOMINAL ELECTRICAL CHARACTERISTICS 15 V NOMINAL ELECTRICAL CHARACTERISTICS ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS TYPICAL PERFORMANCE CHARACTERISTICS MAIN AMPLIFIER, DC PERFORMANCE MAIN AMPLIFIER, AC PERFORMANCE GUARD AMPLIFIER THEORY OF OPERATION ESD STRUCTURE INPUT STAGE GAIN STAGE OUTPUT STAGE GUARD BUFFER APPLICATIONS INFORMATION INPUT PROTECTION SINGLE-SUPPLY AND RAIL-TO-RAIL OUTPUT CAPACITIVE LOAD STABILITY EMI REJECTION RATIO HIGH IMPEDANCE MEASUREMENTS INPUT BIAS CURRENT INPUT RESISTANCE INPUT OFFSET VOLTAGE INSULATION RESISTANCE GUARDING DIELECTRIC RELAXATION HUMIDITY EFFECTS CONTAMINATION CLEANING AND HANDLING SOLDER PASTE SELECTION CURRENT NOISE CONSIDERATIONS LAYOUT GUIDELINES PHYSICAL IMPLEMENTATION OF GUARDING TECHNIQUES GUARD RING GUARD PLANE VIA FENCE CABLES AND CONNECTORS ELECTROSTATIC INTERFERANCE PHOTODIODE INTERFACE DC ERROR ANALYSIS AC ERROR ANALYSIS NOISE ANALYSIS DESIGN RECOMMENDATIONS DESIGN EXAMPLE POWER SUPPLY RECOMMENDATIONS POWER SUPPLY CONSIDERATIONS LONG-TERM DRIFT TEMPERATURE HYSTERESIS OUTLINE DIMENSIONS ORDERING GUIDE