Preliminary Datasheet ZHB6790 (Diodes) - 2

ZHB6790 THERMAL CHARACTERISTICS PARAMETER SYMBOL VALUE UNIT Total Power Dissipation at Tamb = 25°C* Ptot Any single transistor “on” 1.25 W Q1 and Q3 “on” or Q2 and Q4 “on” equally 2 W Derate above 25°C* Any single transistor “on” 10 mW/ °C Q1 and Q3 “on” or Q2 and Q4 “on” equally 16 mW/ °C Thermal Resistance - Junction to Ambient* Any single transistor “on” 100 °C/ W Q1 and Q3 “on” or Q2 and Q4 “on” equally 62.5 °C/ W 100 60 D=t1 t1 D=t1 tP 80 t1 tP 50 tP tP 60 40 D=1 30 D=0.5 40 D=0.2 D=1 D=0.1 D=0.5 20 D=0.05 D=0.2 20 D=0.1 Single Pulse 10 D=0.05 Single Pulse 0 0 100us 1ms 10ms 100ms 1s 10s 100s 100us 1ms 10ms 100ms 1s 10s 100s Pulse Width Pulse Width Transient Thermal Resistance Transient Thermal Resistance Single Transistor "On" Q1 and Q3 or Q2 and Q4 "On" 2.0 10 1.5 Dual Transistors † Single Transistor 1.0 1 Full Copper Dual Transistors † Minimum Single Transistor Copper 0.5 0 0.1 0 20 40 60 80 100 120 140 160 0.1 1 10 T - Temperature (°C) Pcb Area (inches squared) Derating curve Pd v Pcb Area Comparison * The power which can be dissipated assuming the device is mounted in a typical manner on a PCB with copper equal to 2 inches square. †"Two devices on" is the standard operating condition for the bridge. Eg. opposing NPN/PNP pairs rurned on.