Datasheet LND150, LND250 (Microchip)
| Fabricante | Microchip |
| Descripción | N-Channel Depletion-Mode DMOS FETs |
| Páginas / Página | 16 / 1 — LND150/LND250. N-Channel Depletion-Mode DMOS FETs. Features. General … |
| Formato / tamaño de archivo | PDF / 1.3 Mb |
| Idioma del documento | Inglés |
LND150/LND250. N-Channel Depletion-Mode DMOS FETs. Features. General Description. Applications. Package Types. 3-lead TO-92
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LND150/LND250 N-Channel Depletion-Mode DMOS FETs Features General Description
• Free from Secondary Breakdown The LND150 and LND250 are high-voltage N-channel • Low-Power Drive Requirement Depletion-mode (normally-on) transistors utilizing lateral DMOS technology. The gate is ESD protected. • Ease of Paralleling • Excellent Thermal Stability The LND150/LND250 are ideal for high-voltage appli- cations, such as normally-on switches, precision • Integral Source-Drain Diode constant-current sources, voltage-ramp generation • High Input Impedance and Low CISS and amplification. • ESD Gate Protection
Applications
• Solid-State Relays • Normally-On Switches • Converters • Power Supply Circuits • Constant-Current Sources • Input Protection Circuits
Package Types 3-lead TO-92 3-lead SOT-23 3-lead SOT-89
(Top view) (Top view) (Top view)
SOURCE SOURCE DRAIN DRAIN DRAIN SOURCE SOURCE GATE GATE GATE
See Table 3-1, Table 3-2 and Table 3-3 for pin information. 2018 Microchip Technology Inc. DS20005454A-page 1 Document Outline N-Channel Depletion-Mode DMOS FETs Features Applications General Description Package Types 1.0 Electrical Characteristics Absolute Maximum Ratings† DC Electrical Characteristics AC Electrical Characteristics Temperature Specifications Thermal Characteristics 2.0 Typical Performance Curves FIGURE 2-1: Output Characteristics. FIGURE 2-2: Transconductance vs. Drain Current. FIGURE 2-3: Maximum Rated Safe Operating Area. FIGURE 2-4: Saturation Characteristics. FIGURE 2-5: Power Dissipation vs. Ambient Temperature. FIGURE 2-6: Thermal Response Characteristics. FIGURE 2-7: BVDSS Variation with Temperature. FIGURE 2-8: Transfer Characteristics. FIGURE 2-9: Capacitance vs. Drain-to- Source Voltage. FIGURE 2-10: Drain Current vs. RSOURCE. FIGURE 2-11: VGS(OFF) and RDS Variation with Temperature. FIGURE 2-12: Gate Drive Dynamic Characteristics. 3.0 Pin Description TABLE 3-1: TO-92 Pin Function Table TABLE 3-2: SOT-23 Pin Function Table TABLE 3-3: SOT-89 Pin Function Table 4.0 Functional Description FIGURE 4-1: Switching Waveforms and Test Circuit. TABLE 4-1: Product Summary 5.0 Packaging Information 5.1 Package Marking Information Appendix A: Revision History Revision A (August 2018) Product Identification System Worldwide Sales and Service
LND150/LND250 N-Channel Depletion-Mode DMOS FETs Features General Description
• Free from Secondary Breakdown The LND150 and LND250 are high-voltage N-channel • Low-Power Drive Requirement Depletion-mode (normally-on) transistors utilizing lateral DMOS technology. The gate is ESD protected. • Ease of Paralleling • Excellent Thermal Stability The LND150/LND250 are ideal for high-voltage appli- cations, such as normally-on switches, precision • Integral Source-Drain Diode constant-current sources, voltage-ramp generation • High Input Impedance and Low CISS and amplification. • ESD Gate Protection
Applications
• Solid-State Relays • Normally-On Switches • Converters • Power Supply Circuits • Constant-Current Sources • Input Protection Circuits
Package Types 3-lead TO-92 3-lead SOT-23 3-lead SOT-89
(Top view) (Top view) (Top view)
SOURCE SOURCE DRAIN DRAIN DRAIN SOURCE SOURCE GATE GATE GATE
See Table 3-1, Table 3-2 and Table 3-3 for pin information. 2018 Microchip Technology Inc. DS20005454A-page 1 Document Outline N-Channel Depletion-Mode DMOS FETs Features Applications General Description Package Types 1.0 Electrical Characteristics Absolute Maximum Ratings† DC Electrical Characteristics AC Electrical Characteristics Temperature Specifications Thermal Characteristics 2.0 Typical Performance Curves FIGURE 2-1: Output Characteristics. FIGURE 2-2: Transconductance vs. Drain Current. FIGURE 2-3: Maximum Rated Safe Operating Area. FIGURE 2-4: Saturation Characteristics. FIGURE 2-5: Power Dissipation vs. Ambient Temperature. FIGURE 2-6: Thermal Response Characteristics. FIGURE 2-7: BVDSS Variation with Temperature. FIGURE 2-8: Transfer Characteristics. FIGURE 2-9: Capacitance vs. Drain-to- Source Voltage. FIGURE 2-10: Drain Current vs. RSOURCE. FIGURE 2-11: VGS(OFF) and RDS Variation with Temperature. FIGURE 2-12: Gate Drive Dynamic Characteristics. 3.0 Pin Description TABLE 3-1: TO-92 Pin Function Table TABLE 3-2: SOT-23 Pin Function Table TABLE 3-3: SOT-89 Pin Function Table 4.0 Functional Description FIGURE 4-1: Switching Waveforms and Test Circuit. TABLE 4-1: Product Summary 5.0 Packaging Information 5.1 Package Marking Information Appendix A: Revision History Revision A (August 2018) Product Identification System Worldwide Sales and Service