Datasheet PMV20EN (Nexperia) - 7
| Fabricante | Nexperia |
| Descripción | 30 V, N-channel Trench MOSFET |
| Páginas / Página | 15 / 7 — Nexperia. PMV20EN. 30 V, N-channel Trench MOSFET. Fig. 6. Output … |
| Revisión | 05072018 |
| Formato / tamaño de archivo | PDF / 324 Kb |
| Idioma del documento | Inglés |
Nexperia. PMV20EN. 30 V, N-channel Trench MOSFET. Fig. 6. Output characteristics: drain current as a
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Nexperia PMV20EN 30 V, N-channel Trench MOSFET
aaa-013412 24 017aaa545 10-2 10 V ID ID 4.5 V (A) (A) 3.2 V 3.8 V 10-3 16 min typ max 10-4 2.8 V 8 10-5 2.5 V VGS = 2.2 V 0 10-6 0 1 2 3 4 0.0 0.5 1.0 1.5 2.0 2.5 VDS (V) VGS (V) Tj = 25 °C Tj = 25 °C; VDS = 5 V
Fig. 6. Output characteristics: drain current as a Fig. 7. Sub-threshold drain current as a function of function of drain-source voltage; typical values gate-source voltage
017aaa546 0.10 017aaa547 0.10 RDSon RDSon (Ω) 2.5 V 3.0 V 3.25 V (Ω) 0.08 VGS = 2.75 V 0.08 0.06 0.06 0.04 0.04 T 3.5 V j = 150 °C 3.75 V 0.02 4.5 V 10 V 0.02 Tj = 25 °C 0.00 0.00 0 5 10 15 20 25 0 2 4 6 8 10 ID (A) VGS (V) Tj = 25 °C ID = 8 A
Fig. 8. Drain-source on-state resistance as a function Fig. 9. Drain-source on-state resistance as a function of drain current; typical values of gate-source voltage; typical values
PMV20EN All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2018. Al rights reserved
Product data sheet 5 July 2018 7 / 15
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Test information 12. Package outline 13. Soldering 14. Revision history 15. Legal information Contents
aaa-013412 24 017aaa545 10-2 10 V ID ID 4.5 V (A) (A) 3.2 V 3.8 V 10-3 16 min typ max 10-4 2.8 V 8 10-5 2.5 V VGS = 2.2 V 0 10-6 0 1 2 3 4 0.0 0.5 1.0 1.5 2.0 2.5 VDS (V) VGS (V) Tj = 25 °C Tj = 25 °C; VDS = 5 V
Fig. 6. Output characteristics: drain current as a Fig. 7. Sub-threshold drain current as a function of function of drain-source voltage; typical values gate-source voltage
017aaa546 0.10 017aaa547 0.10 RDSon RDSon (Ω) 2.5 V 3.0 V 3.25 V (Ω) 0.08 VGS = 2.75 V 0.08 0.06 0.06 0.04 0.04 T 3.5 V j = 150 °C 3.75 V 0.02 4.5 V 10 V 0.02 Tj = 25 °C 0.00 0.00 0 5 10 15 20 25 0 2 4 6 8 10 ID (A) VGS (V) Tj = 25 °C ID = 8 A
Fig. 8. Drain-source on-state resistance as a function Fig. 9. Drain-source on-state resistance as a function of drain current; typical values of gate-source voltage; typical values
PMV20EN All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2018. Al rights reserved
Product data sheet 5 July 2018 7 / 15
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Test information 12. Package outline 13. Soldering 14. Revision history 15. Legal information Contents