Datasheet PSMN0R9-25YLC (Nexperia)
| Fabricante | Nexperia |
| Descripción | N-channel 25 V 0.99 mΩ logic level MOSFET in LFPAK using NextPower technology |
| Páginas / Página | 15 / 1 — PSMN0R9-25YLC N-channel 25 V 0.99 mΩ logic level MOSFET in LFPAK using … |
| Revisión | 02042018 |
| Formato / tamaño de archivo | PDF / 933 Kb |
| Idioma del documento | Inglés |
PSMN0R9-25YLC N-channel 25 V 0.99 mΩ logic level MOSFET in LFPAK using NextPower technology. Rev. 2 — 4 July 2011
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PSMN0R9-25YLC N-channel 25 V 0.99 mΩ logic level MOSFET in LFPAK using NextPower technology Rev. 2 — 4 July 2011 Product data sheet 1. Product profile 1.1 General description
Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.
1.2 Features and benefits
High reliability Power SO8 package, Ultra low QG, QGD and QOSS for high qualified to 175°C system efficiencies at low and high Optimised for 4.5V Gate drive utilising loads NextPower Superjunction technology Ultra low Rdson and low parasitic inductance
1.3 Applications
DC-to-DC converters Power OR-ing Lithium-ion battery protection Server power supplies Load switching Sync rectifier
1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit
VDS drain-source voltage 25 °C ≤ Tj ≤ 175 °C - - 25 V ID drain current Tmb = 25 °C; see Figure 1 [1] - - 100 A Ptot total power dissipation Tmb = 25 °C; see Figure 2 - - 272 W Tj junction temperature -55 - 175 °C
Static characteristics
RDSon drain-source on-state VGS = 4.5 V; ID = 25 A; - 0.95 1.25 mΩ resistance Tj = 25 °C; see Figure 12 VGS = 10 V; ID = 25 A; - 0.75 0.99 mΩ Tj = 25 °C; see Figure 12 Document Outline 1. Product profile 1.1 General description 1.2 Features and benefits 1.3 Applications 1.4 Quick reference data 2. Pinning information 3. Ordering information 4. Limiting values 5. Thermal characteristics 6. Characteristics 7. Package outline 8. Revision history 9. Legal information 9.1 Data sheet status 9.2 Definitions 9.3 Disclaimers 9.4 Trademarks 10. Contact information 11. Contents
PSMN0R9-25YLC N-channel 25 V 0.99 mΩ logic level MOSFET in LFPAK using NextPower technology Rev. 2 — 4 July 2011 Product data sheet 1. Product profile 1.1 General description
Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.
1.2 Features and benefits
High reliability Power SO8 package, Ultra low QG, QGD and QOSS for high qualified to 175°C system efficiencies at low and high Optimised for 4.5V Gate drive utilising loads NextPower Superjunction technology Ultra low Rdson and low parasitic inductance
1.3 Applications
DC-to-DC converters Power OR-ing Lithium-ion battery protection Server power supplies Load switching Sync rectifier
1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit
VDS drain-source voltage 25 °C ≤ Tj ≤ 175 °C - - 25 V ID drain current Tmb = 25 °C; see Figure 1 [1] - - 100 A Ptot total power dissipation Tmb = 25 °C; see Figure 2 - - 272 W Tj junction temperature -55 - 175 °C
Static characteristics
RDSon drain-source on-state VGS = 4.5 V; ID = 25 A; - 0.95 1.25 mΩ resistance Tj = 25 °C; see Figure 12 VGS = 10 V; ID = 25 A; - 0.75 0.99 mΩ Tj = 25 °C; see Figure 12 Document Outline 1. Product profile 1.1 General description 1.2 Features and benefits 1.3 Applications 1.4 Quick reference data 2. Pinning information 3. Ordering information 4. Limiting values 5. Thermal characteristics 6. Characteristics 7. Package outline 8. Revision history 9. Legal information 9.1 Data sheet status 9.2 Definitions 9.3 Disclaimers 9.4 Trademarks 10. Contact information 11. Contents