Preliminary Datasheet HAT2169N (Renesas)

HAT2169N
Silicon N Channel Power MOS FET Power Switching Preliminary Rev.0.01 May.29.2005
Features
• High speed switching • Capable of 4.5 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 3.1 mΩ typ. (at VGS = 10 V)
Outline
LFPAK-i 5 6 7 8 D D D D 1(S) 4 2(S) 2 G X 3(S) XX 8(D) 1, 2, 3 Source 7(D) 4(G) 4 Gate 6(D) 5, 6, 7, 8 Drain 5(D) S S S 1 2 3
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage VDSS 40 V Gate to source voltage VGSS ±20 V Drain current ID 50 A Drain peak current I Note1 D(pulse) 200 A Body-drain diode reverse drain current IDR 50 A Avalanche current IAP Note 2 30 A Avalanche energy EAR Note 2 72 mJ Channel dissipation Pch Note3 30 W Channel to Case Thermal Resistance θch-C 4.17 °C/W Channel temperature Tch 150 °C Storage temperature Tstg – 55 to + 150 °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tch = 25°C, Rg ≥ 50 Ω 3. Tc = 25°C Rev.0.01, May.29.2005, page 1 of 3 Document Outline 161-HAT2169H HAT2169N Features Outline Absolute Maximum Ratings Electrical Characteristics Package Dimensions