Datasheet NTZD3155C (ON Semiconductor) - 6
| Fabricante | ON Semiconductor |
| Descripción | MOSFET – Small Signal, Complementary with ESD Protection, SOT-563 20 V, 540 mA / -430 |
| Páginas / Página | 8 / 6 — NTZD3155C. P−CHANNEL TYPICAL PERFORMANCE CURVES. Figure 1. On−Region … |
| Revisión | 4 |
| Formato / tamaño de archivo | PDF / 144 Kb |
| Idioma del documento | Inglés |
NTZD3155C. P−CHANNEL TYPICAL PERFORMANCE CURVES. Figure 1. On−Region Characteristics. Figure 2. Transfer Characteristics
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NTZD3155C P−CHANNEL TYPICAL PERFORMANCE CURVES
(TJ = 25°C unless otherwise noted) 1 1 V T GS = −2 V J = 25°C VDS ≥ −10 V −1.6 V 0.8 V 0.8 GS = −1.8 V 0.6 0.6 −1.4 V 0.4 0.4 DRAIN CURRENT (A) −1.2 V DRAIN CURRENT (A) −I D, 0.2 −I D, 0.2 TJ = −55°C −1 V 25°C 100°C 0 0 0 1 2 3 4 5 6 7 8 9 10 0 0.5 1 1.5 2 2.5 −VDS, DRAIN−TO−SOURCE VOLTAGE (V) −VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
) W W 1.4 0.8 I T D = −0.43 A J = 25°C 1.3 0.75 ANCE ( TJ = 25°C ANCE ( 0.7 1.2 VGS = −1.8 V 1.1 0.65 1.0 0.6 0.9 −SOURCE RESIST 0.55 −SOURCE RESIST 0.8 −TO 0.5 −TO 0.7 VGS = −2.5 V 0.45 0.6 DRAIN DRAIN 0.4 0.5 1 2 3 4 5 6 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 DS(on), DS(on), R −V R GS, GATE−TO−SOURCE VOLTAGE (V) −ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source Figure 4. On−Resistance vs. Drain Current and Voltage Gate Voltage
1.6 10000 ID = −0.43 A VGS = 0 V VGS = −4.5 V 1.4 TJ = 150°C 1000 −SOURCE 1.2 −TO 1 , LEAKAGE (nA) TJ = 100°C DRAIN ANCE (NORMALIZED) 100 −I DSS 0.8 DS(on),R RESIST 0.6 10 −50 −25 0 25 50 75 100 125 150 2 4 6 8 10 12 14 16 18 20 TJ, JUNCTION TEMPERATURE (°C) −VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with Figure 6. Drain−to−Source Leakage Current Temperature vs. Voltage www.onsemi.com 6
(TJ = 25°C unless otherwise noted) 1 1 V T GS = −2 V J = 25°C VDS ≥ −10 V −1.6 V 0.8 V 0.8 GS = −1.8 V 0.6 0.6 −1.4 V 0.4 0.4 DRAIN CURRENT (A) −1.2 V DRAIN CURRENT (A) −I D, 0.2 −I D, 0.2 TJ = −55°C −1 V 25°C 100°C 0 0 0 1 2 3 4 5 6 7 8 9 10 0 0.5 1 1.5 2 2.5 −VDS, DRAIN−TO−SOURCE VOLTAGE (V) −VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
) W W 1.4 0.8 I T D = −0.43 A J = 25°C 1.3 0.75 ANCE ( TJ = 25°C ANCE ( 0.7 1.2 VGS = −1.8 V 1.1 0.65 1.0 0.6 0.9 −SOURCE RESIST 0.55 −SOURCE RESIST 0.8 −TO 0.5 −TO 0.7 VGS = −2.5 V 0.45 0.6 DRAIN DRAIN 0.4 0.5 1 2 3 4 5 6 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 DS(on), DS(on), R −V R GS, GATE−TO−SOURCE VOLTAGE (V) −ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source Figure 4. On−Resistance vs. Drain Current and Voltage Gate Voltage
1.6 10000 ID = −0.43 A VGS = 0 V VGS = −4.5 V 1.4 TJ = 150°C 1000 −SOURCE 1.2 −TO 1 , LEAKAGE (nA) TJ = 100°C DRAIN ANCE (NORMALIZED) 100 −I DSS 0.8 DS(on),R RESIST 0.6 10 −50 −25 0 25 50 75 100 125 150 2 4 6 8 10 12 14 16 18 20 TJ, JUNCTION TEMPERATURE (°C) −VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with Figure 6. Drain−to−Source Leakage Current Temperature vs. Voltage www.onsemi.com 6