Datasheet NTZD3155C (ON Semiconductor) - 4
| Fabricante | ON Semiconductor |
| Descripción | MOSFET – Small Signal, Complementary with ESD Protection, SOT-563 20 V, 540 mA / -430 |
| Páginas / Página | 8 / 4 — NTZD3155C. N−CHANNEL TYPICAL PERFORMANCE CURVES. Figure 1. On−Region … |
| Revisión | 4 |
| Formato / tamaño de archivo | PDF / 144 Kb |
| Idioma del documento | Inglés |
NTZD3155C. N−CHANNEL TYPICAL PERFORMANCE CURVES. Figure 1. On−Region Characteristics. Figure 2. Transfer Characteristics
Línea de modelo para esta hoja de datos
Versión de texto del documento
NTZD3155C N−CHANNEL TYPICAL PERFORMANCE CURVES
(TJ = 25°C unless otherwise noted) 1.2 1.8 5.5 V T V J = 25°C 1.6 DS w 10 V 1.0 1.8 V TJ = −55°C 1.4 V TJ = 100°C 0.8 GS = 1.6 V 1.2 VGS = 2.0 V to 2.2 V 1.0 0.6 V 0.8 GS = 1.4 V 0.4 0.6 , DRAIN CURRENT (A) , DRAIN CURRENT (A) I D 0.4 0.2 I D V T GS = 1.2 V J = 25°C 0.2 VGS = 1.0 V 0 0 0 1 2 3 4 5 6 7 8 9 10 0.5 1.0 1.5 2.0 2.5 3.0 VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
1.0 0.9 ID = 0.54 A TJ = 25°C 0.9 TJ = 25°C 0.8 ) V W 0.8 W GS = 1.8 V −SOURCE 0.7 0.7 −TO −SOURCE CURRENT ANCE ( ANCE ( 0.6 0.6 −TO VGS = 2.5 V RESIST , DRAIN RESIST 0.5 0.5 , DRAIN DS(on) VGS = 4.5 V 0.4 R 0.4 DS(on)R 0.3 0.3 1 2 3 4 5 6 0.2 0.4 0.6 0.8 1 1.2 VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)
Figure 3. On−Resistance versus Figure 4. On−Resistance versus Drain Current Gate−to−Source Voltage and Gate Voltage
2 1000 VGS = 0 V 1.8 ID = 0.54 A VGS = 4.5 V TJ = 150°C 1.6 −SOURCE 1.4 −TO 100 1.2 , LEAKAGE (nA) , DRAIN ANCE (NORMALIZED) 1 I DSS DS(on)R RESIST 0.8 TJ = 100°C 0.6 10 −50 −25 0 25 50 75 100 125 150 2 4 6 8 10 12 14 16 18 20 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with Figure 6. Drain−to−Source Leakage Current Temperature versus Voltage www.onsemi.com 4
(TJ = 25°C unless otherwise noted) 1.2 1.8 5.5 V T V J = 25°C 1.6 DS w 10 V 1.0 1.8 V TJ = −55°C 1.4 V TJ = 100°C 0.8 GS = 1.6 V 1.2 VGS = 2.0 V to 2.2 V 1.0 0.6 V 0.8 GS = 1.4 V 0.4 0.6 , DRAIN CURRENT (A) , DRAIN CURRENT (A) I D 0.4 0.2 I D V T GS = 1.2 V J = 25°C 0.2 VGS = 1.0 V 0 0 0 1 2 3 4 5 6 7 8 9 10 0.5 1.0 1.5 2.0 2.5 3.0 VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
1.0 0.9 ID = 0.54 A TJ = 25°C 0.9 TJ = 25°C 0.8 ) V W 0.8 W GS = 1.8 V −SOURCE 0.7 0.7 −TO −SOURCE CURRENT ANCE ( ANCE ( 0.6 0.6 −TO VGS = 2.5 V RESIST , DRAIN RESIST 0.5 0.5 , DRAIN DS(on) VGS = 4.5 V 0.4 R 0.4 DS(on)R 0.3 0.3 1 2 3 4 5 6 0.2 0.4 0.6 0.8 1 1.2 VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)
Figure 3. On−Resistance versus Figure 4. On−Resistance versus Drain Current Gate−to−Source Voltage and Gate Voltage
2 1000 VGS = 0 V 1.8 ID = 0.54 A VGS = 4.5 V TJ = 150°C 1.6 −SOURCE 1.4 −TO 100 1.2 , LEAKAGE (nA) , DRAIN ANCE (NORMALIZED) 1 I DSS DS(on)R RESIST 0.8 TJ = 100°C 0.6 10 −50 −25 0 25 50 75 100 125 150 2 4 6 8 10 12 14 16 18 20 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with Figure 6. Drain−to−Source Leakage Current Temperature versus Voltage www.onsemi.com 4