Datasheet STK984-090A-E (ON Semiconductor) - 6

STK984-090A-E
ELECTRICAL CHARACTERISTICS (Note 4)
at Ta = 25C , VB1, VB2 = 13.5V unless otherwise specified
Parameter Test Conditions Symbol Min Typ Max Unit -10 15 mA -0.3 0.5 V -0.2 0.4 V 2.91 3.00 3.09 m 0.9 1.8 2.8 μs 0.9 1.9 3.0 μs -0.3 -s 1.3 2.9 4.5 μs 0.8 2.2 3.5 μs Power output section
Current consumption (Control system) VB1=16V, VB2=16V Icc Output saturation voltage IO=20A. VB1 to U, V, W
IO=20A. U, V, W to PG Current sensing resistor
Time delay (ON) VDS(sat)
Rs IO=20A for U, V, W low to high
IO=20A for U, V, W high to low Rise time IO=20A Time delay (OFF) IO=20A for U, V, W high to low td(on)
tr IO=20A for U, V, W low to high td(off)
tf -0.3 -s θjc -4.5 -C/W Undervoltage Lockout Falling Threshold Vuv 4.45 4.75 5.1 V Undervoltage Lockout Hysteresis Vuv(hy) 0.07 0.2 0.3 V Undervoltage Lockout Output Delay tuvoff -1.0 -s 21 34 44 A tocdgoff -4.3 -s tINT -1 -ms tocoff -4.3 -s 47 84 113 A tspdgoff -3.0 -s tspoff -3.0 -s Tst(rising) 146 155 165 C Tst(falling) 126 135 145 C tthdgoff -3.4 -s tthoff -3.4 -s Over Voltage Protection Rising Threshold Vov 24 -V Over Voltage Protection Hysteresis Vov(hy) -0.5 -V Over Voltage Protection Output Delay tovoff -1.0 -s VDIAG -0.2 V Rise time IO=20A Thermal resistance
Chip to case Thermal Resistance Junction-to-substrate (MOSFET) Protection Functions Over Current Threshold Automatic Recovery ISD Over Current DIAG Output Delay Time
Over Current Shutdown Interval
Over Current Shutdown Output Delay
Ground Fault Short-Circuit Protection Power-Cycle IOC Ground Fault Short-Circuit Detection DIAG
Output Delay Time
Ground Fault Short-Circuit Shutdown
Output Delay Time
Temperature Protection Shutdown
Temperature Protection Recovery IPM Substrate Temperature
Rising Temperature Threshold
IPM Substrate Temperature
Falling Temperature Threshold Over Temperature DIAG Output Delay
Time
Over Temperature Shutdown Output Delay DIAG Output
DIAG Output Voltage (DIAG1, DIAG2) DIAGx=LOW, Sink Current =1mA DIAG Output Leakage Current VDIAG=5V
1
IDILK
A
(DIAG1, DIAG2)
4. Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.
Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 6