Datasheet PHK12NQ03LT (Nexperia) - 4
| Fabricante | Nexperia |
| Descripción | N-channel TrenchMOS logic level FET |
| Páginas / Página | 13 / 4 — Philips Semiconductors. PHK12NQ03LT. N-channel TrenchMOS™ logic level … |
| Revisión | 01032004 |
| Formato / tamaño de archivo | PDF / 212 Kb |
| Idioma del documento | Inglés |
Philips Semiconductors. PHK12NQ03LT. N-channel TrenchMOS™ logic level FET. Fig 1. Normalized total power dissipation as a. Fig 2
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Philips Semiconductors PHK12NQ03LT N-channel TrenchMOS™ logic level FET
03aa11 03aa19 120 120 P I der der (%) (%) 80 80 40 40 0 0 0 50 100 150 200 0 50 100 150 200 Tamb (°C) Tamb (°C) P VGS ≥ 5 V tot P = ------------ × 100% der P I D tot 25° ( C ) I = ---------- × 100% der I D 25° ( C )
Fig 1. Normalized total power dissipation as a Fig 2. Normalized continuous drain current as a function of ambient temperature. function of ambient temperature.
003aaa160 102 ID Limit RDSon = VDS / ID tp = 10 µs (A) 100 µ s 10 1 ms 1 10 ms DC 1 s 10-1 10 s 10-2 10-1 1 10 102 VDS (V) Tamb = 25 °C; IDM is single pulse
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 12955 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data Rev. 02 — 02 March 2004 3 of 12
Document Outline 1. Product profile 1.1 Description 1.2 Features 1.3 Applications 1.4 Quick reference data 2. Pinning information 3. Ordering information 4. Limiting values 5. Thermal characteristics 5.1 Transient thermal impedance 6. Characteristics 7. Package outline 8. Revision history 9. Data sheet status 10. Definitions 11. Disclaimers 12. Trademarks
03aa11 03aa19 120 120 P I der der (%) (%) 80 80 40 40 0 0 0 50 100 150 200 0 50 100 150 200 Tamb (°C) Tamb (°C) P VGS ≥ 5 V tot P = ------------ × 100% der P I D tot 25° ( C ) I = ---------- × 100% der I D 25° ( C )
Fig 1. Normalized total power dissipation as a Fig 2. Normalized continuous drain current as a function of ambient temperature. function of ambient temperature.
003aaa160 102 ID Limit RDSon = VDS / ID tp = 10 µs (A) 100 µ s 10 1 ms 1 10 ms DC 1 s 10-1 10 s 10-2 10-1 1 10 102 VDS (V) Tamb = 25 °C; IDM is single pulse
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 12955 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data Rev. 02 — 02 March 2004 3 of 12
Document Outline 1. Product profile 1.1 Description 1.2 Features 1.3 Applications 1.4 Quick reference data 2. Pinning information 3. Ordering information 4. Limiting values 5. Thermal characteristics 5.1 Transient thermal impedance 6. Characteristics 7. Package outline 8. Revision history 9. Data sheet status 10. Definitions 11. Disclaimers 12. Trademarks