Datasheet Si2399DS (Vishay) - 2
| Fabricante | Vishay |
| Descripción | P-Channel 20-V (D-S) MOSFET |
| Páginas / Página | 10 / 2 — Si2399DS. MOSFET SPECIFICATIONS. Parameter Symbol. Test. Conditions. Min. … |
| Formato / tamaño de archivo | PDF / 214 Kb |
| Idioma del documento | Inglés |
Si2399DS. MOSFET SPECIFICATIONS. Parameter Symbol. Test. Conditions. Min. Typ. Max. Unit. Static. Dynamicb
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Si2399DS
Vishay Siliconix
MOSFET SPECIFICATIONS
(TJ = 25 °C, unless otherwise noted)
Parameter Symbol Test Conditions Min. Typ. Max. Unit Static
Drain-Source Breakdown Voltage VDS VDS = 0 V, ID = - 250 µA - 20 V VDS Temperature Coefficient VDS/TJ - 13.4 I mV/°C D = - 250 µA VGS(th) Temperature Coefficient VGS(th)/TJ 2.9 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 0.6 - 1.5 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 12 V ± 100 nA VDS = - 20 V, VGS = 0 V - 1 Zero Gate Voltage Drain Current IDSS µA VDS = - 20 V, VGS = 0 V, TJ = 55 °C - 10 On-State Drain Currenta I D(on) VDS - 5 V, VGS = - 4.5 V - 20 A VGS = - 10 V, ID = - 5.1 A 0.028 0.034 Drain-Source On-State Resistancea RDS(on) VGS = - 4.5 V, ID = - 4.5 A 0.037 0.045 VGS = - 2.5 V, ID = - 3.7 A 0.055 0.067 Forward Transconductancea gfs VDS = - 5 V, ID = - 5.1 A 15 S
Dynamicb
Input Capacitance Ciss 835 Output Capacitance C V oss DS = - 10 V, VGS = 0 V, f = 1 MHz 180 pF Reverse Transfer Capacitance Crss 155 VDS = - 10 V, VGS = - 4.5 V, ID = - 5.1 A 10 20 Total Gate Charge Qg 6.4 9.6 nC Gate-Source Charge Qgs VDS = - 10 V, VGS = - 2.5 V, ID = - 5.1 A 1.7 Gate-Drain Charge Qgd 3.4 Gate Resistance Rg f = 1 MHz 0.9 4.4 8.8 Turn-On Delay Time td(on) 22 33 Rise Time tr VDD = - 10 V, RL = 2.4 20 30 ns I Turn-Off Delay Time td(off) D = - 4.1 A, VGEN = - 4.5 V, Rg = 1 28 42 Fall Time tf 9 18
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current IS TC = 25 °C - 2.1 A Pulse Diode Forward Currenta ISM - 20 Body Diode Voltage VSD IS = - 4.1 A - 0.8 - 1.2 V Body Diode Reverse Recovery Time trr 23 35 ns Body Diode Reverse Recovery Charge Qrr 12 20 nC IF = - 4.1 A, dI/dt = 100 A/µs, TJ = 25 °C Reverse Recovery Fall Time ta 15 ns Reverse Recovery Rise Time tb 8 Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 67343 2 S11-0239-Rev. A, 14-Feb-11
Vishay Siliconix
MOSFET SPECIFICATIONS
(TJ = 25 °C, unless otherwise noted)
Parameter Symbol Test Conditions Min. Typ. Max. Unit Static
Drain-Source Breakdown Voltage VDS VDS = 0 V, ID = - 250 µA - 20 V VDS Temperature Coefficient VDS/TJ - 13.4 I mV/°C D = - 250 µA VGS(th) Temperature Coefficient VGS(th)/TJ 2.9 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 0.6 - 1.5 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 12 V ± 100 nA VDS = - 20 V, VGS = 0 V - 1 Zero Gate Voltage Drain Current IDSS µA VDS = - 20 V, VGS = 0 V, TJ = 55 °C - 10 On-State Drain Currenta I D(on) VDS - 5 V, VGS = - 4.5 V - 20 A VGS = - 10 V, ID = - 5.1 A 0.028 0.034 Drain-Source On-State Resistancea RDS(on) VGS = - 4.5 V, ID = - 4.5 A 0.037 0.045 VGS = - 2.5 V, ID = - 3.7 A 0.055 0.067 Forward Transconductancea gfs VDS = - 5 V, ID = - 5.1 A 15 S
Dynamicb
Input Capacitance Ciss 835 Output Capacitance C V oss DS = - 10 V, VGS = 0 V, f = 1 MHz 180 pF Reverse Transfer Capacitance Crss 155 VDS = - 10 V, VGS = - 4.5 V, ID = - 5.1 A 10 20 Total Gate Charge Qg 6.4 9.6 nC Gate-Source Charge Qgs VDS = - 10 V, VGS = - 2.5 V, ID = - 5.1 A 1.7 Gate-Drain Charge Qgd 3.4 Gate Resistance Rg f = 1 MHz 0.9 4.4 8.8 Turn-On Delay Time td(on) 22 33 Rise Time tr VDD = - 10 V, RL = 2.4 20 30 ns I Turn-Off Delay Time td(off) D = - 4.1 A, VGEN = - 4.5 V, Rg = 1 28 42 Fall Time tf 9 18
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current IS TC = 25 °C - 2.1 A Pulse Diode Forward Currenta ISM - 20 Body Diode Voltage VSD IS = - 4.1 A - 0.8 - 1.2 V Body Diode Reverse Recovery Time trr 23 35 ns Body Diode Reverse Recovery Charge Qrr 12 20 nC IF = - 4.1 A, dI/dt = 100 A/µs, TJ = 25 °C Reverse Recovery Fall Time ta 15 ns Reverse Recovery Rise Time tb 8 Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 67343 2 S11-0239-Rev. A, 14-Feb-11