Datasheet BLP05H9S500P (Ampleon) - 6

BLP05H9S500P Power LDMOS transistor
amp00946 amp00947 27 80 G (2) (2) (2) (1) (1) (1) p G ηD (3) (3) (3) (4) (4) (4) (dB) (dB) (dB) (%) (%) (%) (5) (5) (5) (6) (6) (6) 70 25 60 23 (1) (1) (1) (2) (2) (2) (3) (3) (3) (4) (4) (4) 50 (5) (5) (5) 21 (6) (6) (6) 40 19 30 0 100 200 300 400 500 600 0 100 200 300 400 500 600 PL (W) PL (W) f = 433 MHz; IDq = 50 mA; CW. f = 433 MHz; IDq = 50 mA; CW. (1) VDS = 50 V (1) VDS = 50 V (2) VDS = 45 V (2) VDS = 45 V (3) VDS = 40 V (3) VDS = 40 V (4) VDS = 35 V (4) VDS = 35 V (5) VDS = 30 V (5) VDS = 30 V (6) VDS = 25 V (6) VDS = 25 V
Fig 5. Power gain as a function of output power; Fig 6. Drain efficiency as a function of output power; typical values typical values
amp00948 amp00949 27 75.2 Gp G ηD (dB) (dB) (dB) (%) (%) (%) 26 74.8 25 (4) (4) (4) (3) (3) (3) (2) (2) (2) 74.4 (1) (1) (1) 24 74 23 22 73.6 0 100 200 300 400 500 600 20 30 40 50 60 70 PL (W) T (°C) VDS = 50 V; f = 433 MHz; CW. VDS = 50 V; IDq = 50 mA; f = 433 MHz; CW; at PL(1dB). (1) IDq = 20 mA (2) IDq = 50 mA (3) IDq = 100 mA (4) IDq = 150 mA
Fig 7. Power gain as a function of output power; Fig 8. Drain efficiency as a function of temperature; typical values typical values
BLP05H9S500P All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2019. All rights reserved.
Product data sheet Rev. 1 — 10 September 2019 6 of 13
Document Outline 1. Product profile 1.1 General description 1.2 Features and benefits 1.3 Applications 2. Pinning information 3. Ordering information 4. Limiting values 5. Thermal characteristics 6. Characteristics 7. Test information 7.1 Ruggedness in class-AB operation 7.2 Impedance information 7.3 Application circuit 7.4 Graphical data 8. Package outline 9. Handling information 10. Abbreviations 11. Revision history 12. Legal information 12.1 Data sheet status 12.2 Definitions 12.3 Disclaimers 12.4 Trademarks 13. Contact information 14. Contents