Datasheet BLP05H9S500P (Ampleon) - 2
| Fabricante | Ampleon |
| Descripción | Power LDMOS transistor |
| Páginas / Página | 13 / 2 — BLP05H9S500P. Power LDMOS transistor. 2. Pinning information. Table 2. … |
| Formato / tamaño de archivo | PDF / 1.6 Mb |
| Idioma del documento | Inglés |
BLP05H9S500P. Power LDMOS transistor. 2. Pinning information. Table 2. Pinning. Pin. Description. Simplified outline. Graphic symbol
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BLP05H9S500P Power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol
1 gate 2 4 2 gate 1 4 3 3 drain 1 1 4 drain 2 5 2 1 2 3 aaa-003574
3. Ordering information Table 3. Ordering information Type number Package Name Description Version
BLP05H9S500P - plastic, heatsink small outline package; 4 leads (flat) OMP-780-4F-1
4. Limiting values Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Min Max Unit
VDS drain-source voltage - 108 V VGS gate-source voltage 6 +11 V Tstg storage temperature 65 +150 C Tj junction temperature [1] - 225 C [1] Continuous use at maximum temperature will affect the reliability, for details refer to the online MTF calculator.
5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Typ Unit
Rth(j-c) thermal resistance from junction to case Tcase = 90 C; PL = 500 W 0.22 K/W BLP05H9S500P All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2019. All rights reserved.
Product data sheet Rev. 1 — 10 September 2019 2 of 13
Document Outline 1. Product profile 1.1 General description 1.2 Features and benefits 1.3 Applications 2. Pinning information 3. Ordering information 4. Limiting values 5. Thermal characteristics 6. Characteristics 7. Test information 7.1 Ruggedness in class-AB operation 7.2 Impedance information 7.3 Application circuit 7.4 Graphical data 8. Package outline 9. Handling information 10. Abbreviations 11. Revision history 12. Legal information 12.1 Data sheet status 12.2 Definitions 12.3 Disclaimers 12.4 Trademarks 13. Contact information 14. Contents
BLP05H9S500P Power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol
1 gate 2 4 2 gate 1 4 3 3 drain 1 1 4 drain 2 5 2 1 2 3 aaa-003574
3. Ordering information Table 3. Ordering information Type number Package Name Description Version
BLP05H9S500P - plastic, heatsink small outline package; 4 leads (flat) OMP-780-4F-1
4. Limiting values Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Min Max Unit
VDS drain-source voltage - 108 V VGS gate-source voltage 6 +11 V Tstg storage temperature 65 +150 C Tj junction temperature [1] - 225 C [1] Continuous use at maximum temperature will affect the reliability, for details refer to the online MTF calculator.
5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Typ Unit
Rth(j-c) thermal resistance from junction to case Tcase = 90 C; PL = 500 W 0.22 K/W BLP05H9S500P All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2019. All rights reserved.
Product data sheet Rev. 1 — 10 September 2019 2 of 13
Document Outline 1. Product profile 1.1 General description 1.2 Features and benefits 1.3 Applications 2. Pinning information 3. Ordering information 4. Limiting values 5. Thermal characteristics 6. Characteristics 7. Test information 7.1 Ruggedness in class-AB operation 7.2 Impedance information 7.3 Application circuit 7.4 Graphical data 8. Package outline 9. Handling information 10. Abbreviations 11. Revision history 12. Legal information 12.1 Data sheet status 12.2 Definitions 12.3 Disclaimers 12.4 Trademarks 13. Contact information 14. Contents