Datasheet TK2P90E (Toshiba)

TK2P90E MOSFETs Silicon N-Channel MOS (π-MOS) TK2P90E 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 4.7 Ω (typ.) (2) Low leakage current : IDSS = 10 µA (max) (VDS = 720 V) (3) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain(Heatsink) 3: Source DPAK 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 900 V Gate-source voltage VGSS ±30 Drain current (DC) (Note 1) ID 2 A Drain current (pulsed) (Note 1) IDP 6 Power dissipation (Tc = 25) PD 80 W Single-pulse avalanche energy (Note 2) EAS 157 mJ Avalanche current IAR 2 A Reverse drain current (DC) (Note 1) IDR 2 Reverse drain current (pulsed) (Note 1) IDRP 6 Channel temperature Tch 150 Storage temperature Tstg -55 to 150 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 2014-02 1 2014-09-17 Rev.3.0