Datasheet 2ED2184 (4) S06F (J) (Infineon) - 7

2ED2184 (4) S06F (J) 650 V half-bridge gate driver with integrated bootstrap diode TA Ambient temperature -40 125 ºC Note 2: Logic operation for VS of – 10 V to +650 V. Logic state held for VS of -10 to –VBS. 4.3 Static electrical characteristics (VCC– COM) = (VB – VS) = 15 V, VSS = COM and TA = 25 °C unless otherwise specified. The VIL, VIH and IIN parameters are referenced to Vss / COM and are applicable to the respective input leads: HIN and LIN. The VO and IO parameters are referenced to VS / COM and are applicable to the respective output leads HO or LO. The VCCUV parameters are referenced to COM. The VBSUV parameters are referenced to VS. Table 5 Static electrical characteristics Symbol Definition Min. Typ. Max. Units Test Conditions VBSUV+ VBS supply undervoltage positive going 7.6 8.2 8.9 threshold VBSUV- VBS supply undervoltage negative going 6.7 7.2 8.1 threshold V VBSUVHY VBS supply undervoltage hysteresis 1.0 — VCCUV+ VCC supply undervoltage positive going 8.4 9.1 9.8 threshold VCCUV- VCC supply undervoltage negative going 7.5 8.2 8.9 threshold VCCUVHY VCC supply undervoltage hysteresis 0.9 — ILK High-side floating wel offset supply leakage — 1 12.5 VB = VS = 650 V IQBS Quiescent VBS supply current — 170 — uA All inputs are in IQCC Quiescent VCC supply current — 550 — the off state VOH High level output voltage drop, Vcc- VLO , VB- VHO — 0.05 0.2 V IO = 20 mA VOL Low level output voltage drop, VO — 0.02 0.1 Io+mean Mean output current from 3 V to 6 V 1.65 2.2 CL = 22 nF Io+ Peak output current turn-on1 2.5 — VO = 0 V PW ≤ 10 µs A Io-mean Mean output current from 12 V to 9 V 1.65 2.2 CL = 22 nF Io- Peak output current turn-off1 2.5 VO = 15 V PW ≤ 10 µs VIH Logic “1” input voltage 1.7 2.1 2.4 VIL Logic “0” input voltage 0.7 0.9 1.1 V VSD,TH+ SD Input positive going threshold 1.7 2.1 2.4 Vcc=10 V to 20 V VSD,TH- SD Input negative going threshold 0.7 0.9 1.1 IIN+ Input bias current (Output = High) — 25 50 V µA IN = 5V, SD=0 IIN- Input bias current (Output = Low) — — 10 VIN = 0V, SD=5V V Bootstrap diode forward voltage between Vcc FBSD and VB — 1 1.2 V I F=0.3 mA I Bootstrap diode forward current between Vcc FBSD and VB 55 100 145 mA V CC-VB=4 V RBSD Bootstrap diode resistance 15 25 40 Ω VF1=4V,VF2=5 V V Allowable Negative VS pin voltage for IN S Signal propagation to HO — -11 -10 V Vcc=15 V 1 Not subjected to production test, verified by characterization. Datasheet 7 of 25 V 2.10 www.infineon.com/soi 2019-09-12 Document Outline Features Product summary Product validation Description 1 Table of contents 2 Block diagram 3 Pin configuration and functionality 3.1 Pin configuration 3.2 Pin functionality 4 Electrical parameters 4.1 Absolute maximum ratings 4.2 Recommended operating conditions 4.3 Static electrical characteristics 4.4 Dynamic electrical characteristics 5 Application information and additional details 5.1 IGBT / MOSFET gate drive 5.2 Switching and timing relationships 5.3 Deadtime and matched propagation delays 5.4 Input logic compatibility 5.5 Undervoltage lockout 5.6 Shutdown Input 5.7 Bootstrap diode 5.8 Calculating the bootstrap capacitance CBS 5.9 Tolerant to negative tranisents on input pins 5.10 Negative voltage transient tolerance of VS pin 5.11 NTSOA – Negative Transient Safe Operating Area 5.12 Higher headroom for input to output signal transmission with logic operation upto -11 V 5.13 Maximum switching frequency 5.14 PCB layout tips 6 Qualification information0F 7 Related products 8 Package details 9 Part marking information 10 Additional documentation and resources 10.1 Infineon online forum resources 11 Revision history