Datasheet FDS6575 (ON Semiconductor) - 4

FDS6575 Typical Characteristics 50 2.2 VGS = -4.5V RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE -2.5V -3.0V
-ID, DRAIN CURRENT (A) 40
-2.0V -1.5V 30 20 10 0 2
V GS = -1.5V
1.8
1.6
1.4 -2.0V
-2.5V 1.2 -3.0V
-3.5V
-4.5V 1
0.8 0 0.5 1 1.5 2 0 10 20 -V DS , DRAIN TO SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. 50 0.035 ID = -10A
V GS = -4.5V ID = -5A 1.4 1.2 1 0.8 0.6 0.03 0.025
0.02
T A = 125o C
0.015 0.01
T A = 25o C
0.005 -50 -25 0 25 50 75 100 125 150 175 0 1 2 3 4 5 -V GS, GATE TO SOURCE VOLTAGE (V) TJ , JUNCTION TEMPERATURE (oC) Figure 3. On-Resistance Variation with
Temperature. Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10 50
25o C TA = -55oC 40 -I S, REVERSE DRAIN CURRENT (A) VDS = -5V
-ID, DRAIN CURRENT (A) 40 Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage. RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE 1.6 30 -ID , DRAIN CURRENT (A) 125oC 30 20 10 0 V GS = 0V
1
T A = 125o C
0.1
25o C
0.01
-55o C
0.001 0.0001
0 0.5 1 1.5 -V GS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 2 0 0.2 0.4 0.6 0.8 -V SD , BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature. FDS6575 Rev F(W)