Datasheet AL8862Q (Diodes) - 3

AL8862Q Absolute Maximum Ratings
(Note 4)
Symbol Parameter Rating Unit
VIN Input Voltage -0.3 to +65 V VSW, VSET SW, SET Pin Voltage -0.3 to +65 V VCTRL CTRL Pin Input Voltage -0.3 to +6 V TA Operating Ambient Temperature -40 to +125 °C TJ Operating Junction Temperature -40 to +150 °C TSTG Storage Temperature Range -65 to +150 °C TLEAD Lead Temperature (Soldering, 10s) +300 °C Note: 4. Stresses greater than those listed under Absolute Maximum Ratings can cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to Absolute Maximum Ratings for extended periods can affect device reliability.
ESD Ratings
(Note 5)
Symbol Parameter Rating Unit
Human-Body Model (HBM), Per AEC-Q100-002 ±3000 VESD V Charged-Device Model (CDM), Per AEC-Q100-011 ±1000 Note: 5. AEC-Q100-002 indicates that HBM stressing shall be accordance with the ANSI/ESDA/JEDEC JS-001 specification.
Recommended Operating Conditions Symbol Parameter Min Max Unit
VIN Input Voltage 5 55 V fSW Switching Frequency — 1 MHz IOUT Continuous Output Current — 1 A VCTRL Voltage Range for 10% to 100% DC Dimming Relative to GND 0.4 2.5 V VCTRL_HIGH Voltage High for PWM Dimming Relative to GND 2.6 5.5 V VCTRL_LOW Voltage Low for PWM Dimming Relative to GND 0 0.3 V TA Operating Ambient Temperature -40 +125 °C
Thermal Information
(Note 6)
Symbol Parameter Rating Unit
θJA Junction-to-Ambient Thermal Resistance 58 °C/W θJC Junction-to-Case (Top) Thermal Resistance 6.5 °C/W Note: 6. Device mounted on 2″×2″ FR-4 substrate PCB, 2oz copper, with minimum recommended pad layout. AL8862Q 3 of 16 December 2019 Document number: DS42199 Rev. 3 - 2
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